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PDF FDW252P Data sheet ( Hoja de datos )
| Número de pieza | FDW252P | |
| Descripción | P-Channel 2.5V Specified PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FDW252P (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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June 2000
PRELIMINARY
FDW252P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
Features
• –8.8 A, –20 V. RDS(ON) = 0.012 Ω @ VGS = –4.5 V
RDS(ON) = 0.018 Ω @ VGS = –2.5 V
• Extended VGSS range (±12V) for battery
applications
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
D
S
S
D
TSSOP-8
G
S
S
D
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
ID Drain Current – Continuous
– Pulsed
(Note 1)
PD Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
252P
FDW252P
13’’
5
6
7
8
Ratings
-20
± 12
-8.8
-50
1.3
0.6
-55 to +150
96
208
Tape width
16mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2000 Fairchild Semiconductor Corporation
FDW252P Rev. B(W)
1 page  
TSSOP-8 Package Dimensions
TSSOP-8 (FS PKG Code S4)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in millimeters
Part Weight per unit (gram): 0.0334
January 2000, Rev. B
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDW252P.PDF ] | |
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