|
|
|
부품번호 | FDW254P 기능 |
|
|
기능 | P-Channel 1.8V Specified PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
August 2000
PRELIMINARY
FDW254P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
Features
• –9.2 A, –20 V.
RDS(ON) = 0.012 Ω @ VGS = –4.5 V
RDS(ON) = 0.015 Ω @ VGS = –2.5 V
RDS(ON) = 0.0215 Ω @ VGS = –1.8 V
• Rds ratings for use with 1.8 V logic
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
D
S
S
D
TSSOP-8
G
S
S
D
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
PD Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
254P
FDW254P
13’’
54
63
72
81
Ratings
-20
±8
-9.2
-50
1.3
0.6
-55 to +150
96
208
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2000 Fairchild Semiconductor Corporation
FDW254P Rev C (W)
Typical Characteristics
5
ID = -9.2A
4
3
VDS = -6V
-10V
-8V
2
1
0
0 10 20 30 40 50 60 70
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
10ms
100ms
1s
10s
DC
VGS = -4.5V
0.1 SINGLE PULSE
RθJA = 208oC/W
TA = 25oC
0.01
0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
10000
8000
6000
CISS
f = 1 MHz
VGS = 0 V
4000
2000
0
0
COSS
CRSS
5 10 15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.01
0.1
SINGLE PULSE
RθJA = 208°C/W
TA = 25°C
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
0.001
0.0001
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) + RθJA
RθJA = 208 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.01
0.1 1
t1, TIME (sec)
10
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
100
1000
FDW254P Rev. C (W)
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ FDW254P.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FDW254P | P-Channel 1.8V Specified PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |