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부품번호 | FDW9926 기능 |
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기능 | Dual N-Channel 2.5V Specified PowerTrench MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 5 페이지수
July 2003
FDW9926A
Dual N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 10V).
Applications
• Battery protection
• Load switch
• Power management
Features
• 4.5 A, 20 V.
RDS(ON) = 32 mΩ @ VGS = 4.5 V
RDS(ON) = 45 mΩ @ VGS = 2.5 V
• Optimized for use in battery circuit applications
• Extended VGSS range (±10V) for battery applications
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Total Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
9926A
FDW9926A
13’’
©2003 Fairchild Semiconductor Corporation
1
2
3
4
Ratings
20
±10
4.5
30
1.0
0.6
–55 to +150
125
208
Tape width
12mm
8
7
6
5
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
FDW9926A Rev D (W)
Typical Characteristics
5
ID = 4.5A
4
3
VDS = 5V
15V
10V
2
1
0
01234567
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
8
100
RDS(ON) LIMIT
10
1
VGS = 4.5V
SINGLE PULSE
0.1 RθJA = 208oC/W
TA = 25oC
1ms
10ms
100ms
1s
10s
DC
100us
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
900
f = 1MHz
VGS = 0 V
600
Ciss
300
Coss
Crss
0
0
4 8 12 16
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 208°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA =208 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
10
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
100
1000
FDW9926A Rev. D (W)
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부품번호 | 상세설명 및 기능 | 제조사 |
FDW9926 | Dual N-Channel 2.5V Specified PowerTrench MOSFET | Fairchild Semiconductor |
FDW9926A | Dual N-Channel 2.5V Specified PowerTrench MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |