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부품번호 | FDZ204P 기능 |
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기능 | P-Channel 2.5V Specified PowerTrench | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
March 2003
FDZ204P
P-Channel 2.5V Specified PowerTrench BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ204P minimizes both PCB space
and RDS(ON). This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low RDS(ON).
Applications
• Battery management
• Load switch
• Battery protection
DDD
S SS
G SS
Pin 1
Features
• –4.5 A, –20 V. RDS(ON) = 45 mΩ @ VGS = –4.5 V
RDS(ON) = 75 mΩ @ VGS = –2.5 V
• Occupies only 4 mm2 of PCB area.
Less than 40% of the area of a SSOT-6
• Ultra-thin package: less than 0.80 mm height when
mounted to PCB
• Ultra-low Qg x RDS(ON) figure-of-merit.
• High power and current handling capability.
S
G
Bottom
Top
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJB Thermal Resistance, Junction-to-Ball
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
204P
FDZ204P
7’’
D
Ratings
–20
±12
–4.5
–20
1.8
–55 to +150
67
11
1
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
3000 units
©2003 Fairchild Semiconductor Corporation
FDZ204P Rev. D2 (W)
Typical Characteristics
20
VGS = -4.5V
-3.5V
15
-3.0V
-2.5V
10
-2.0V
5
0
01234
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
ID = -4.5A
VGS = -4.5V
1.4
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
15
VDS = -5V
10
TA = -55oC
25oC
125oC
5
0
0.5
1 1.5 2 2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
3
Figure 5. Transfer Characteristics.
2
1.8
VGS = -2.5V
1.6
1.4 -3.0V
1.2 -3.5V
-4.0V
1
0.8
0
5 10 15
-ID, DRAIN CURRENT (A)
-4.5V
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.18
0.14
ID = -2.3 A
0.1
TA = 125oC
0.06
TA = 25oC
0.02
1.5
2 2.5 3 3.5 4 4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
TA = 125oC
0.1
0.01
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDZ204P Rev. D2 (W)
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ FDZ204P.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
FDZ2040L | Integrated Load Switch | Fairchild Semiconductor |
FDZ204P | P-Channel 2.5V Specified PowerTrench | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |