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PDF FDZ2552P Data sheet ( Hoja de datos )
| Número de pieza | FDZ2552P | |
| Descripción | Dual P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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November 1999
ADVANCE INFORMATION
FDZ2552P
Dual P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ2552P minimizes both PCB space
and RDS(ON). This dual BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low RDS(ON).
Applications
•= Battery management
•= Load switch
•= Battery protection
Features
•= –6 A, –20 V. RDS(ON) = 0.045 Ω @ VGS = –4.5 V
RDS(ON) = 0.075 Ω @ VGS = –2.5 V.
•= Occupies only 0.10 cm2 of PCB area.
1/3 the area of SO-8.
•= Ultra-thin package: less than 0.70 mm height when
mounted to PCB.
•= Outstanding thermal transfer characteristics:
significantly better than SO-8.
•= Ultra-low Qg x RDS(ON) figure-of-merit.
•= High power and current handling capability.
Pin 1
DDD
S SS
GSS
S SS
GSS
DDD
Bottom
Q2
Q1
Pin 1
Top
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, Tstg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
F2552
FDZ2552P
TBD
S
G
Q1
D
Q2
G
S
Ratings
–20
±12
–6
-20
3.0
–55 to +175
50
8
Tape width
TBD
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
TBD
1999 Fairchild Semiconductor Corporation
FDZ2552P Rev. A (w)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FDZ2552P.PDF ] | |
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