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부품번호 | FDZ7064N 기능 |
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기능 | 30V N-Channel Logic Level PowerTrench BGA MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
January 2003
FDZ7064N
30V N-Channel Logic Level PowerTrench BGA MOSFET
General Description
Features
Combining Fairchild’s 30V PowerTrench process with
state of the art BGA packaging, the FDZ7064N
minimizes both PCB space and RDS(ON). This BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low RDS(ON).
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications resulting in DC/DC power supply
designs with higher overall efficiency.
Applications
• 13.5 A, 30 V. RDS(ON) = 8.0 mΩ @ VGS = 4.5 V
RDS(ON) = 7.0 mΩ @ VGS = 10 V
• Occupies only 14 mm2 of PCB area. Only 42% of
the area of SO-8
• Ultra-thin package: less than 0.80 mm height when
mounted to PCB
• 3.5 x 4 mm2 Footprint
• High power and current handling capability.
• DC/DC converters
• Solenoid drive
Pin 1
D DDD DD
D SS S SD
D SS S SD
D SS S SD
DGSS SD
Bottom
Pin 1
Top
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, Tstg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJB Thermal Resistance, Junction-to-Ball
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
7064N
FDZ7064N
13”
Ratings
30
±12
13.5
60
2.2
–55 to +150
56
4.5
0.6
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
3000
2003 Fairchild Semiconductor Corporation
FDZ7064N Rev. D2 (W)
Typical Characteristics
60
VGS = 10V
50
4.5V
3.0V
2.5V
40
30
20
2.0V
10
0
0 0.5 1 1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
2
Figure 1. On-Region Characteristics.
1.6
ID = 13.5A
VGS = 10V
1.4
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
60
VDS = 5V
50
40
TA = 125oC
25oC
30
-55oC
20
10
0
1 1.5 2 2.5
VGS, GATE TO SOURCE VOLTAGE (V)
3
Figure 5. Transfer Characteristics.
2
1.8
VGS = 2.5V
1.6
1.4 3.0V
3.5V
1.2
4.5V
6.0V
1 10V
0.8
0
10 20 30 40 50 60
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.022
0.018
ID =6.8 A
0.014
0.01
0.006
TA = 25oC
TA = 125oC
0.002
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
TA = 125oC
0.1
0.01
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDZ7064N Rev. D2(W)
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ FDZ7064N.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
FDZ7064N | 30V N-Channel Logic Level PowerTrench BGA MOSFET | Fairchild Semiconductor |
FDZ7064S | 30V N-Channel PowerTrench SyncFET BGA MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |