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부품번호 FDZ7064S 기능
기능 30V N-Channel PowerTrench SyncFET BGA MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FDZ7064S 데이터시트, 핀배열, 회로
May 2004
FDZ7064S
30V N-Channel PowerTrench  SyncFETTM BGA MOSFET
General Description
Features
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC power
supplies. Combining Fairchild’s 30V PowerTrench
SyncFET process with state of the art BGA packaging, the
FDZ7064S minimizes both PCB space and RDS(ON). This
BGA SyncFET embodies a breakthrough in both packaging
and power MOSFET integration which enables the device
to combine excellent thermal transfer characteristics, high
current handling capability, ultra-low profile packaging, low
gate charge, ultra-low reverse recovery charge and low
RDS(ON).
Applications
DC/DC converters
13.5 A, 30 V. RDS(ON) = 7 m@ VGS = 10 V
RDS(ON) = 9 m@ VGS = 4.5 V
Occupies only 14 mm2 of PCB area. Only 42% of the
area of SO-8
Ultra-thin package: less than 0.8 mm height when
mounted to PCB
3.5 x 4 mm2 Footprint
High power and current handling capability.
Pin 1
DDD D D D
DSSSSD
DSSSSD
DSSSSD
DGS S S D
Bottom
Pin 1
Top
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter
VDSS
VGSS
ID
PD
TJ, Tstg
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R¡£¢ ¤ Thermal Resistance, Junction-to-Ambient
R¡£¢ ¥ Thermal Resistance, Junction-to-Ball
R¡£¢ ¦ Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
7064S
Device
FDZ7064S
Reel Size
13”
Ratings
30
±16
13.5
60
2.2
–55 to +150
56
4.5
0.6
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
3000
©2004 Fairchild Semiconductor Corporation
FDZ7064S Rev. B2 (W)




FDZ7064S pdf, 반도체, 판매, 대치품
Typical Characteristics
10
ID = 13.5A
8
6
4
2
VDS = 10V
15V
20V
0
0 10 20 30 40 50
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
RDS(ON) LIMIT
100 1ms
10
1
VGS = 10V
SINGLE PULSE
0.1 RθJA = 119oC/W
TA = 25oC
10ms
100ms
1s
10s
DC
0.01
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
4000
3000
2000
f = 1MHz
VGS = 0 V
Ciss
1000
Crss
Coss
0
0 5 10 15
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA = 119°C/W
TA = 25°C
30
20
10
0
0.01
0.1
1 10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 119 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.001
0.01
0.1 1 10
t1, TIME (sec)
100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ7064S Rev B2 (W)

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FDZ7064S 전자부품, 판매, 대치품
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FAST
ISOPLANAR™
Power247™
SuperFET™
ActiveArray™
Bottomless™
CoolFET™
FASTr™
FPS™
FRFET™
LittleFET™
PowerSaver™
MICROCOUPLER™ PowerTrench
MicroFET™
QFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
CROSSVOLTGlobalOptoisolator™ MicroPak™
DOME™
GTO™
MICROWIRE™
QS™
SyncFET™
QT Optoelectronics™ TinyLogic
EcoSPARK™ HiSeC™
MSX™
Quiet Series™
TINYOPTO™
E2CMOS™
I2C™
MSXPro™
RapidConfigure™
TruTranslation™
EnSigna™
i-Lo
OCX™
FACT™
ImpliedDisconnect™ OCXPro™
FACT Quiet Series™
OPTOLOGIC
RapidConnect™
UHC™
µSerDes™
UltraFET
SILENT SWITCHERVCX™
Across the board. Around the world.™ OPTOPLANAR™
The Power Franchise
PACMAN™
Programmable Active Droop™
POP™
SMART START™
SPM™
Stealth™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TOANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANY LIABILITY
ARISING OUT OF THEAPPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEYANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTENAPPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11

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