|
|
|
부품번호 | FESB8CT 기능 |
|
|
기능 | FAST EFFICIENT PLASTIC RECTIFIER | ||
제조업체 | General Semiconductor | ||
로고 | |||
전체 2 페이지수
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
FESB8AT THRU FESB8JT
FAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 8.0 Amperes
0.320 (8.13)
0.360 (9.14)
SEATING -T-
PLATE
0.095 (2.41)
0.100 (2.54)
TO-263AB
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
1K2
0.575 (14.60)
0.625 (15.88)
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.027 (0.686)
0.037 (0.940)
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
PIN 1
PIN 2
K - HEATSINK
Dimensions in inches and (millimeters)
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
♦ Glass passivated chip junction
♦ Low leakage, high voltage
♦ High surge current capability
♦ Superfast recovery time, for high efficiency
♦ High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
MECHANICAL DATA
Case: JEDEC TO-263AB molded plastic body
Terminals: Plated lead solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TC=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 8.0A
Maximum DC reverse current
TC=25°C
at rated DC blocking voltage at TC=100°C
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to case mounted on heatsink
SYMBOLS
VRRM
VRMS
VDC
FESB
8AT
50
35
50
FESB FESB FESB FESB
8BT 8CT 8DT 8FT
100 150 200 300
70 105 140 210
100 150 200 300
FESB FESB FESB
8GT 8HT 8JT UNITS
400 500 600 Volts
280 350 420 Volts
400 500 600 Volts
I(AV)
8.0
Amps
IFSM
VF
IR
trr
CJ
RΘJC
TJ, TSTG
125.0
0.95 1.3
10.0
500.0
35.0 50.0
85.0
3.0
-65 to +150
Amps
1.5 Volts
µA
ns
50.0 pF
°C/W
°C
4/98
| |||
구 성 | 총 2 페이지수 | ||
다운로드 | [ FESB8CT.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FESB8CT | FAST EFFICIENT PLASTIC RECTIFIER | General Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |