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부품번호 | ES1C 기능 |
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기능 | SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER | ||
제조업체 | General Semiconductor | ||
로고 | |||
전체 2 페이지수
ES1A THRU ES1D
SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 200 Volts
Forward Current - 1.0 Ampere
DO-214AC
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.090 (2.29)
0.078 (1.98)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203) MAX.
0.208 (5.28)
0.194 (4.93)
Dimensions in inches and (millimeters)
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
♦ For surface mount applications
♦ Low profile package
♦ Ideally suited for use in
very high frequency switching power supplies,
inverters and as a free wheeling diodes
♦ Ultrafast recovery times for high efficiency
♦ Low forward voltage
♦ Low leakage current
♦ Glass passivated chip junction
♦ High temperature soldering guaranteed:
250°C/10 seconds on terminals
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic body over
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.002 ounces, 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=120°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 0.6A
at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=100°C
Maximum reverse recovery time (NOTE 1)
Maximum reverse recovery time
(NOTE 2)
TA=25°C
TA=100°C
Maximum stored charge
(NOTE 2)
TA=25°C
TA=100°C
Typical junction capacitance (NOTE 3)
Maximum thermal resistance (NOTE 4)
Operating and storage temperature range
SYMBOLS
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
trr
trr
Qrr
CJ
RΘJA
RΘJL
TJ, TSTG
ES1A
EA
50
35
50
ES1B
EB
100
70
100
ES1C
EC
150
105
150
1.0
30.0
0.865
0.920
5.0
100
15.0
25.0
35.0
10.0
25.0
7.0
85.0
35.0
-55 to +150
ES1D
ED
200
140
200
UNITS
Volts
Volts
Volts
Amp
Amps
Volts
µA
ns
ns
nC
pF
°C/W
°C
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) trr and Qrr measured at: IF=0.6A, VR=30V, di/dt=50A/µs, Irr =10% IRM for measurement of trr
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts
(4) P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad area
4/98
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구 성 | 총 2 페이지수 | ||
다운로드 | [ ES1C.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
ES1 | Fast-Recovery Rectifier Diodes | Sanken electric |
ES1 | Fast-Recovery Rectifier Diodes | Sanken electric |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |