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Datasheet EMD3 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | EMD3 | General purpose (dual digital transistors) EMD3 / UMD3N / IMD3A
Transistors
General purpose (dual digital transistors)
EMD3 / UMD3N / IMD3A
zFeatures 1) Both the DTA114E chip and DTC114E chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, el |  ROHM Semiconductor | transistor |
| 2 | EMD30 | General purpose transistor
EMD30
Transistors
General purpose transistor (isolated transistors)
EMD30
DTB713Z and DTC114E A are housed independently in a EMT6 package.
zApplications DC / DC converter Motor driver
zExternal dimensions (Unit : mm)
EMT6
1.6
0.5
zFeatures 1) DTr1 : PNP digital transistor | ROHM Semiconductor | transistor |
| 3 | EMD3001 | Regulated Charge Pump DC/DC Converter Preliminary
Elite MicroPower Inc.
EMD3001
Low Noise, Regulated Charge Pump DC/DC Converter
General Description
Two times charge pump and constant switching frequency configuration with low noise characteristics, low external components makes the EMD3001 unique performance and perfect for the porta |  Elite MicroPower | converter |
| 4 | EMD3001-50VC06GRR | Regulated Charge Pump DC/DC Converter Preliminary
Elite MicroPower Inc.
EMD3001
Low Noise, Regulated Charge Pump DC/DC Converter
General Description
Two times charge pump and constant switching frequency configuration with low noise characteristics, low external components makes the EMD3001 unique performance and perfect for the porta | Elite MicroPower | converter |
| 5 | EMD3001-50VC06NRR | Regulated Charge Pump DC/DC Converter Preliminary
Elite MicroPower Inc.
EMD3001
Low Noise, Regulated Charge Pump DC/DC Converter
General Description
Two times charge pump and constant switching frequency configuration with low noise characteristics, low external components makes the EMD3001 unique performance and perfect for the porta | Elite MicroPower | converter |
EMD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | EMD02N06E | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
3.1mΩ
ID
191A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless  Excelliance MOS transistor | | |
| 2 | EMD02N60A | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
5.5Ω
ID UIS, 100% Tested
2A
G S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwis Excelliance MOS transistor | | |
| 3 | EMD02N60AK | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
5.0Ω
ID 2A
G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwi Excelliance MOS transistor | | |
| 4 | EMD02N60CS | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
5.5Ω
ID 2A
G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwi Excelliance MOS transistor | | |
| 5 | EMD02N60CSK | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
5.0Ω
ID 2A
G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwi Excelliance MOS transistor | | |
| 6 | EMD02N60F | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
5.5Ω
ID 2A
G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwi Excelliance MOS transistor | | |
| 7 | EMD02N70CS | Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
700V
D
RDSON (MAX.)
6Ω
ID 2A
G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Excelliance MOS transistor | |
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