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PDF EMIF09-02726SX Data sheet ( Hoja de datos )
| Número de pieza | EMIF09-02726SX | |
| Descripción | EMI FILTER INCLUDING ESD PROTECTION | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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®
Application Specific Discretes
A.S.D.TM
EMIF09-02726Sx
EMI FILTER
INCLUDING ESD PROTECTION
MAIN APPLICATIONS
Where EMI filtering in ESD sensitive equipment is
required :
Computers and printers
Communication systems
Mobile phones
MCU Boards
DESCRIPTION
The EMIF09-02726sx is a highly integrated array
designed to suppress EMI / RFI noise in all
systems subjected to electromagnetic
interferences.
Additionally, this filter includes an ESD protection
circuitry which prevents the protected device from
destruction when subjected to ESD surges up to
15 kV.
BENEFITS
Cost-effectiveness compared to discrete
solution
EMI bi-directional low-pass filter
High efficiency in ESD suppression.
High reliability offered by monolithic integration
SO-20
SSOP20
PIN-OUT CONFIGURATION
I1
I2
I3
I4
I5
GND
I6
I7
I8
I9
9
C
E
L
L
S
O1
O2
O3
O4
O5
GND
O6
O7
O8
O9
COMPLIESWITH THE FOLLOWING STANDARD:
IEC 1000-4-2 15kV (air discharge)
8 kV (contact discharge)
EMIF09-02726Sxfiltering response curves
I
D
O
D
RI/O = 27 Ω, tolerance +/-20%
CIN = 130pF
Typical response to IEC1000-4-2
(16 kV air discharge)
ASD is a trademark of STMicroelectronics
August 1999 - Ed: 2
1/12
1 page  
EMIF09-02726Sx
TECHNICAL INFORMATION
ESD PROTECTION
The EMIF09-02726Sx is particularly optimized to perform high level ESD protection. The clamping voltage
is given by the formula:
VCL = Vbr + Rd.IPP
The protection function is splitted in 2 stages. As shown in figure A1, the ESD strike is clamped by the first
stage S1 and then its remaining overvoltage is applied to the second stage through the resistor R. Such a
configuration makes the output voltage very low at the Vout level.
Fig. A1: ESD clamping behavior
ESD
Surge
Vg
Rg R
Rd
Vin
Vbr
Rd
Vout
Vbr
Rload
S1 S2
EMIF09-02726Sx
Device to be protected
To determine the remaining voltages at both Vin and Vout stages, we give the typical dynamic resistance
value Rd. Considering that : R>>Rd, Rg>>Rd and Rload>>Rd, the voltages are given by the following
formulas:
Vin
=
Rg.Vbr + Rd.Vg
Rg
Vout
=
R.Vbr
+ Rd.Vin
R
The result of the calculation made for VG= 8kV, Rg= 330 Ω (IEC1000-4-2 standard), Vbr=6.6V, Rd=0.3 Ω
and R=27 Ω is:
Vin = 13.87V
Vout = 6.75 V
This confirms the very low remaining voltage across the device to be protected. It is also important to note
that in this approximation the parasitic inductance effect was not taken into account. This could be few
tenths of volts during few ns at the Vin side. This parasitic effect is not present at the Vout side because the
current involved after the resistance R is low.
5/12
5 Page 
EMIF09-02726Sx
PART NUMBERING AND ORDERING INFORMATION
EMIF 09 - 027 26 S 3
EMI FILTERING
9 Bits Wide
R value (Ω)
Surface mount
C/10
Package:
2 x 130pF = 260pF 3: SO-20
6: SSOP20
PACKAGE MECHANICAL DATA
SO-20 (Plastic)
D
A
K
B e A1 L
EH
REF.
DIMENSIONS
Millimeters
Inches
hx45° Min. Typ. Max. Min. Typ. Max.
A 2.35
2.65 0.092
0.104
C A1 0.10
B 0.33
0.20 0.004
0.51 0.013
0.008
0.020
C 0.23
0.32 0.009
0.013
D 12.6
13.0 0.484
0.512
E 7.40
7.60 0.291
0.299
e 1.27
0.050
H 10.0
10.65 0.394
0.419
h 0.25
0.75 0.010
0.029
L 0.50
1.27 0.020
0.050
K 8° (max)
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet EMIF09-02726SX.PDF ] | |
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