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PDF ATF-10736-STR Data sheet ( Hoja de datos )
| Número de pieza | ATF-10736-STR | |
| Descripción | 0.512 GHz General Purpose Gallium Arsenide FET | |
| Fabricantes | Agilent(Hewlett-Packard) | |
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0.5 – 12 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-10736
Features
• High Associated Gain:
13.0␣ dB Typical at 4␣ GHz
• Low Bias:
VDS = 2 V, IDS= 25␣ mA
• High Output Power:
20.0␣ dBm typical P 1 dB at 4␣ GHz
• Low Noise Figure:
1.2␣ dB Typical at 4␣ GHz
Description
The ATF-10736 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. Its noise
figure makes this device appropri-
ate for use in the gain stages of
low noisDe aatmaSplhifeieert4s Uop.ceormating in
the 0.5-12 GHz frequency range.
36 micro-X Package
• Cost Effective Ceramic
Microstrip Package
• Tape-and-Reel Packaging
Option Available [1]
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconcnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units Min. Typ. Max.
NFO Optimum Noise Figure: VDS = 2 V, IDS = 25 mA
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
dB
dB
dB
0.9
1.2 1.4
1.4
GA Gain @ NFO; VDS = 2 V, IDS = 25 mA
f = 2.0 GHz dB
16.5
f = 4.0 GHz dB 12.0 13.0
f = 6.0 GHz dB
10.5
P1 dB
Power Output @ 1 dB Gain Compression
VDS = 4 V, IDS = 70 mA
f = 4.0 GHz dBm
G1 dB 1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA
f = 4.0 GHz dB
gm Transconductance: VDS = 2 V, VGS = 0 V
mmho
IDSS Saturated Drain Current: VDS = 2 V, VGS = 0 V
mA
DataSheet4U.coVmP
Note:
Pinchoff Voltage: VDS = 2 V, IDS = 1 mA
V
1. Refer to PACKAGING section, “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
70
70
-4.0
20.0
12.0
140
130 180
-1.3 -0.5
5-29
5965-8698E
DataShee
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet ATF-10736-STR.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| ATF-10736-STR | 0.5-12 GHz General Purpose Gallium Arsenide FET | Agilent(Hewlett-Packard) |
| ATF-10736-STR | 0.512 GHz General Purpose Gallium Arsenide FET | Agilent(Hewlett-Packard) |
| ATF-10736-STR | 0.512 GHz General Purpose Gallium Arsenide FET | Agilent(Hewlett-Packard) |
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