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ATF-10736-TRI PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 ATF-10736-TRI
기능 0.512 GHz General Purpose Gallium Arsenide FET
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ATF-10736-TRI 데이터시트, 핀배열, 회로
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0.5 – 12 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-10736
Features
• High Associated Gain:
13.0␣ dB Typical at 4␣ GHz
• Low Bias:
VDS = 2 V, IDS= 25␣ mA
• High Output Power:
20.0␣ dBm typical P 1 dB at 4␣ GHz
• Low Noise Figure:
1.2␣ dB Typical at 4␣ GHz
Description
The ATF-10736 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. Its noise
figure makes this device appropri-
ate for use in the gain stages of
low noisDe aatmaSplhifeieert4s Uop.ceormating in
the 0.5-12 GHz frequency range.
36 micro-X Package
• Cost Effective Ceramic
Microstrip Package
• Tape-and-Reel Packaging
Option Available [1]
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconcnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units Min. Typ. Max.
NFO Optimum Noise Figure: VDS = 2 V, IDS = 25 mA
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
dB
dB
dB
0.9
1.2 1.4
1.4
GA Gain @ NFO; VDS = 2 V, IDS = 25 mA
f = 2.0 GHz dB
16.5
f = 4.0 GHz dB 12.0 13.0
f = 6.0 GHz dB
10.5
P1 dB
Power Output @ 1 dB Gain Compression
VDS = 4 V, IDS = 70 mA
f = 4.0 GHz dBm
G1 dB 1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA
f = 4.0 GHz dB
gm Transconductance: VDS = 2 V, VGS = 0 V
mmho
IDSS Saturated Drain Current: VDS = 2 V, VGS = 0 V
mA
DataSheet4U.coVmP
Note:
Pinchoff Voltage: VDS = 2 V, IDS = 1 mA
V
1. Refer to PACKAGING section, “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
70
70
-4.0
20.0
12.0
140
130 180
-1.3 -0.5
5-29
5965-8698E
DataShee




ATF-10736-TRI pdf, 반도체, 판매, 대치품
www.DataSheet4U.com
36 micro-X Package Dimensions
2.15
(0.085)
SOURCE
4
2.11 (0.083) DIA.
DRAIN
GATE 1
SOURCE 2
3
0.508
(0.020)
1.45 ± 0.25
(0.057 ± 0.010) 2.54
(0.100)
0.15 ± 0.05
(0.006 ± 0.002)
et4U.com
0.56
(0.022)
4.57 ± 0.25
0.180 ± 0.010
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx = ± 0.005
mm .xx = ± 0.13
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관련 데이터시트

부품번호상세설명 및 기능제조사
ATF-10736-TR1

0.5-12 GHz General Purpose Gallium Arsenide FET

Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)
ATF-10736-TR1

0.512 GHz General Purpose Gallium Arsenide FET

Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)

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