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PDF ATF-13736 Data sheet ( Hoja de datos )
| Número de pieza | ATF-13736 | |
| Descripción | 2-16 GHz Low Noise Gallium Arsenide FET | |
| Fabricantes | Agilent(Hewlett-Packard) | |
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2–16 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-13736
Features
• Low Noise Figure:
1.8␣ dB Typical at 12␣ GHz
• High Associated Gain:
9.0␣ dB Typical at 12␣ GHz
• High Output Power:
17.5␣ dB Typical at 12␣ GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-and-Reel Packaging
Option Available[1]
Description
The ATF-13736 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. Its noise
figure makes this device appropri-
ate for use in the gain stages of
low noise amplifiers operating in
the 2-16 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
36 micro-X Package
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
NFO Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA
GA Gain @ NFO: VDS = 2.5 V, IDS = 20 mA
f = 8.0 GHz
f = 12.0 GHz
f = 14.0 GHz
f = 8.0 GHz
f = 12.0 GHz
f = 14.0 GHz
dB
dB
dB
dB
dB
dB
P1 dB
G1 dB
gm
IDSS
VP
Power Output @ 1 dB Gain Compression:
VDS = 4 V, IDS = 40 mA
1 dB Compressed Gain: VDS = 4 V, IDS = 40 mA
Transconductance: VDS = 2.5 V, VGS = 0 V
Saturated Drain Current: VDS = 2.5 V, VGS = 0 V
Pinch-off Voltage: VDS = 2.5 V, IDS = 1 mA
f=12.0GHz dBm
f = 12.0 GHz dB
mmho
mA
V
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”.
Min.
8.0
25
40
-4.0
Typ.
1.5
1.8
2.1
11.5
9.0
7.0
17.5
8.5
55
50
-1.5
Max.
2.2
90
-0.5
5-39
5965-8722E
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet ATF-13736.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| ATF-13736 | 2-16 GHz Low Noise Gallium Arsenide FET | Agilent(Hewlett-Packard) |
| ATF-13736-STR | 2-16 GHz Low Noise Gallium Arsenide FET | Agilent(Hewlett-Packard) |
| ATF-13736-TR1 | 2-16 GHz Low Noise Gallium Arsenide FET | Agilent(Hewlett-Packard) |
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