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ATF-13736 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 ATF-13736
기능 2-16 GHz Low Noise Gallium Arsenide FET
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ATF-13736 데이터시트, 핀배열, 회로
2–16 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-13736
Features
• Low Noise Figure:
1.8␣ dB Typical at 12␣ GHz
• High Associated Gain:
9.0␣ dB Typical at 12␣ GHz
• High Output Power:
17.5␣ dB Typical at 12␣ GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-and-Reel Packaging
Option Available[1]
Description
The ATF-13736 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. Its noise
figure makes this device appropri-
ate for use in the gain stages of
low noise amplifiers operating in
the 2-16 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
36 micro-X Package
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
NFO Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA
GA Gain @ NFO: VDS = 2.5 V, IDS = 20 mA
f = 8.0 GHz
f = 12.0 GHz
f = 14.0 GHz
f = 8.0 GHz
f = 12.0 GHz
f = 14.0 GHz
dB
dB
dB
dB
dB
dB
P1 dB
G1 dB
gm
IDSS
VP
Power Output @ 1 dB Gain Compression:
VDS = 4 V, IDS = 40 mA
1 dB Compressed Gain: VDS = 4 V, IDS = 40 mA
Transconductance: VDS = 2.5 V, VGS = 0 V
Saturated Drain Current: VDS = 2.5 V, VGS = 0 V
Pinch-off Voltage: VDS = 2.5 V, IDS = 1 mA
f=12.0GHz dBm
f = 12.0 GHz dB
mmho
mA
V
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”.
Min.
8.0
25
40
-4.0
Typ.
1.5
1.8
2.1
11.5
9.0
7.0
17.5
8.5
55
50
-1.5
Max.
2.2
90
-0.5
5-39
5965-8722E




ATF-13736 pdf, 반도체, 판매, 대치품
36 micro-X Package Dimensions
2.15
(0.085)
SOURCE
4
2.11 (0.083) DIA.
DRAIN
GATE 1
SOURCE 2
3
0.508
(0.020)
1.45 ± 0.25
(0.057 ± 0.010) 2.54
(0.100)
0.15 ± 0.05
(0.006 ± 0.002)
0.56
(0.022)
4.57 ± 0.25
0.180 ± 0.010
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx = ± 0.005
mm .xx = ± 0.13
5-42

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부품번호상세설명 및 기능제조사
ATF-13736

2-16 GHz Low Noise Gallium Arsenide FET

Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)
ATF-13736-STR

2-16 GHz Low Noise Gallium Arsenide FET

Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)

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