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ATF-33143-BLK PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 ATF-33143-BLK
기능 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
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ATF-33143-BLK 데이터시트, 핀배열, 회로
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Technical Data
ATF-33143
Features
• Low Noise Figure
• Excellent Uniformity in
Product Specifications
• Low Cost Surface Mount
Small Plastic Package
SOT-343 (4 lead SC-70)
• Tape-and-Reel Packaging
Option Available
Specifications
1.9 GHz; 4V, 80 mA (Typ.)
• 0.5 dB Noise Figure
• 15 dB Associated Gain
• 22 dBm Output Power at
1␣ dB Gain Compression
• 33.5 dBm Output 3rd Order
Intercept
Applications
• Low Noise Amplifier and
Driver Amplifier for
Cellular/PCS Base Stations
• LNA for WLAN, WLL/RLL,
LEO, and MMDS
Applications
• General Purpose Discrete
PHEMT for Other Ultra Low
Noise Applications
Surface Mount Package
SOT-343
Pin Connections and
Package Marking
DRAIN
SOURCE
SOURCE
GATE
Description
Agilent’s ATF-33143 is a high
dynamic range, low noise,
PHEMT housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
Based on its featured perfor-
mance, ATF-33143 is suitable for
applications in cellular and PCS
base stations, LEO systems,
MMDS, and other systems requir-
ing super low noise figure with
good intercept in the 450␣ MHz to
10 GHz frequency range.
Note: Top View. Package marking
provides orientation and identification.
“3P” = Device code
“x” = Date code character. A new
character is assigned for each month, year.




ATF-33143-BLK pdf, 반도체, 판매, 대치품
ATF-33143 Typical Performance Curves
40 40
2V
3V
4V
30 30
20 20
10
2V
3V
4V
0
0 20 40 60 80 100 120
IDSQ (mA)
Figure 6. OIP3, IIP3 vs. Bias [1] at
2GHz.
25
10
0
0 20 40 60 80 100 120
IDSQ (mA)
Figure 7. OIP3, IIP3 vs. Bias [1] at
900 MHz.
25
20 20
15 15
10 10
5 2V
3V
4V
0
0 20 40 60 80 100 120
IDSQ (mA)
Figure 8. P1dB vs. Bias [1,2] at 2 GHz.
5 2V
3V
4V
0
0 20 40 60 80 100 120
IDSQ (mA)
Figure 9. P1dB vs. Bias [1,2] Tuned for NF
@ 4V, 80mA at 900MHz.
16 1.4 22
1.2
15
Ga
14
13
1.2 21
1.0 20
Ga
0.8 19
1.0
0.8
0.6
12
NF
0.6
11 2 V 0.4
3V
4V
10 0.2
0 20 40 60 80 100 120
IDSQ (mA)
Figure 10. NF and Ga vs. Bias [1] at
2GHz.
18 NF
0.4
17 2 V 0.2
3V
4V
16 0
0 20 40 60 80 100 120
IDSQ (mA)
Figure 11. NF and Ga vs. Bias [1] at
900 MHz.
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 4V
80␣ mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on
production test board requirements. Circuit losses have been de-embedded from actual measurements.
2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease
depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches
P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing.

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ATF-33143-BLK 전자부품, 판매, 대치품
ATF-33143 Power Parameters Tuned for Max P1dB, VDS = 4 V, IDSQ = 80 mA
Freq P1dB
Id
(GHz) (dBm) (mA)
G1dB PAE1dB P3dB
Id PAE3dB Γ Out_mag Γ Out_ang
(dB) (%) (dBm) (mA) (%)
(Mag.)
(°)
0.9 20.7
89 23.2 33
23.2 102
51
0.39
160
1.5 21.2
91 20.7 36
23.8 116
51
0.43
165
1.8 21.1 80 19.2 40 23.0 94 52
0.43
170
2.0 21.6 81 18.1 44 23.2 89 57
0.42
174
4.0 23.0
97 11.9 48
24.6 135
48
0.40
-150
6.0 24.0 130
5.9
36
25.2 136
36
0.37
-124
70
60
Pout
Gain
50 PAE
40
30
20
10
0
-10
-20
-40 -30 -20 -10 0 10 20
Pin (dBm)
Figure 20. Swept Power Tuned for
Max P1dB
VDS = 4V, I DSQ = 80 mA, 2 GHz.
Notes:
1. Measurements made on ATN LP1 power load pull system.
2. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease
depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches
P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing.
3. PAE (%) = ((Pout – Pin) / Pdc) X 100
4. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.

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부품번호상세설명 및 기능제조사
ATF-33143-BLK

Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)

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