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PDF ATF-33143-BLK Data sheet ( Hoja de datos )
| Número de pieza | ATF-33143-BLK | |
| Descripción | Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package | |
| Fabricantes | Agilent(Hewlett-Packard) | |
| Logotipo | .gif "Agilent(Hewlett-Packard)"){kind=logo} |
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Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Technical Data
ATF-33143
Features
• Low Noise Figure
• Excellent Uniformity in
Product Specifications
• Low Cost Surface Mount
Small Plastic Package
SOT-343 (4 lead SC-70)
• Tape-and-Reel Packaging
Option Available
Specifications
1.9 GHz; 4V, 80 mA (Typ.)
• 0.5 dB Noise Figure
• 15 dB Associated Gain
• 22 dBm Output Power at
1␣ dB Gain Compression
• 33.5 dBm Output 3rd Order
Intercept
Applications
• Low Noise Amplifier and
Driver Amplifier for
Cellular/PCS Base Stations
• LNA for WLAN, WLL/RLL,
LEO, and MMDS
Applications
• General Purpose Discrete
PHEMT for Other Ultra Low
Noise Applications
Surface Mount Package
SOT-343
Pin Connections and
Package Marking
DRAIN
SOURCE
SOURCE
GATE
Description
Agilent’s ATF-33143 is a high
dynamic range, low noise,
PHEMT housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
Based on its featured perfor-
mance, ATF-33143 is suitable for
applications in cellular and PCS
base stations, LEO systems,
MMDS, and other systems requir-
ing super low noise figure with
good intercept in the 450␣ MHz to
10 GHz frequency range.
Note: Top View. Package marking
provides orientation and identification.
“3P” = Device code
“x” = Date code character. A new
character is assigned for each month, year.
1 page  
ATF-33143 Typical Performance Curves, continued
1.5
80 mA
60 mA
30
25
80 mA
60 mA
1.0 20
15
0.5 10
5
0
0 2 4 6 8 10
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and
Current at 4V.
0
02468
FREQUENCY (GHz)
Figure 13. Associated Gain vs.
Frequency and Current at 4V.
10
25
25°C
-40°C
85°C
20
15
10
2.0 40
35
1.5
30
1.0
25
0.5
20
25°C
-40°C
85°C
50
0 2 4 6 8 10
FREQUENCY (GHz)
Figure 14. Fmin and Ga vs. Frequency
and Temp at VDS = 4 V, I DS = 80mA.
35 3.5
30 P1dB 3.0
OIP3
25 Gain 2.5
NF
20 2.0
15 1.5
10 1.0
5 0.5
00
0 20 40 60 80 100 120
IDSQ (mA)
Figure 16. OIP3, P1dB, NF and Gain vs.
Bias[1,2] at 3.9 GHz.
15
0 2000 4000 6000 8000
FREQUENCY (MHz)
Figure 15. P1dB, OIP3 vs. Frequency
and Temp at VDS = 4 V, I DS = 80mA.
35
30 3
25
20 2
15
10 1
5
P1dB
Gain
OIP3
NF
00
0 20 40 60 80 100 120
IDSQ (mA)
Figure 17. OIP3, P1dB, NF and Gain vs.
Bias [1,2] at 5.8 GHz.
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 4V 80 mA bias. This circuit represents a trade-off
between optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have
been de-embedded from actual measurements.
2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease
depending on frequency and dc bias point. At lower values of Idsq the device is running closer to class B as power output approaches
P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing.
5 Page 
ATF-33143 Die Model
Statz Model
MESFETM1
NFET=yes
PFET=no
Vto=–0.95
Beta=0.48
Lambda=0.09
Alpha=4
B=0.8
Tnom=27
Idstc=
Vbi=0.7
Tau=
Betatce=
Delta1=0.2
Delta2=
Gscap=3
Cgs=1.6 pF
Gdcap=3
Cgd=0.32 pF
Rgd=
Tqm=
Vmax=
Fc=
Rd=.125
Rg=1
Rs=0.0625
Ld=0.00375 nH
Lg-0.00375 nH
Ls=0.00125 nH
Cds=0.08 pF
Crf=0.1
Rc=62.5
Gsfwd=1
Gsrev=0
Gdfwd=1
Gdrev=0
Vjr=1
Is=1 nA
Ir=1 nA
Imax=0.1
Xti=
N=
Eg=
Vbr=
Vtotc=
Rin=
Taumd1=no
Fnc=1E6
R=0.17
C=0.2
P=0.65
wVgfwd=
wBvgs=
wBvgd=
wBvds=
wldsmax=
wPmax=
Al lParams=
This model can be used as a
design tool. It has been tested on
MDS for various specifications.
However, for more precise and
accurate design, please refer to
the measured data in this data
sheet. For future improvements
Agilent reserves the right to
change these models without
prior notice.
ATF-33143 Model
INSIDE Package
GATE
Var
Ean
VAR
VAR1
K=5
Z2=85
Z1=30
C
C1
C=0.1 pF
TLINP
TL1
Z=Z2/2 Ohm
L=20 0 mil
K=K
A=D 0000
F=1 GHz
TanD=0.001
TLINP
TL2
Z=Z2/2 Ohm
L=20 0 mil
K=K
A=0.0000
F=1 GHz
TanD=0.001
Port
G
Num=1 VIA2
TLINP
TLINP
TL4 TL3
Z=Z1 Ohm Z=Z2 Ohm
V1 L=15 mil L=25 mil
D=20 mil K=1
K=K
H=25.0 mil A=0.000 A=0.000
T=0.15 mil F=1 GHz F=1 GHz
Rho=1.0 TanD=0.001 TanD=0.001
L
L1
L=0.6 nH
R=0.001
GaAsFET
FET1
Model=MESFETN1
Mode=nonlinear
L
L6
L=0.2 nH
R=0.001
C
C2
C=0.11 pF
W=40 mil
SOURCE
L
L7
Port
S1
Num=2
VIA2
V2
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
TLINP
TL10
Z=Z1 Ohm
L=15 mil
K=1
A=0.000
F=1 GHz
TanD=0.001
TLINPTL9
Z=Z2 Ohm
L=10.0 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
L
L4
L=0.2 nH
R=0.001
MSub
MSUB
MSub1
H=25.0 mil
Er=9.6
Mur=1
Cond=1 DE+50
C=0.6 nH
R=D 001
Hu=3.9e+0.34 mil
T=0.15 mil
TanD=D
Rough=D mil
VIA2
V3
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
SOURCE
TLINP
TLINP
TL7 TL8
Z=Z2/2 Ohm Z=Z1 Ohm
L=5.0 mil L=15 mil
K=K K=1
A=0.0000 A=0.0000
F=1 GHz F=1 GHz
TanD=0.001 TanD=0.001
VIA2
V4
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
TLINP
TLINP
TL5 TL6
Z=Z2 Ohm Z=Z1 Ohm
L=26.0 mil L=15 mil
K=K K=1
A=0.0000 A=0.0000
F=1 GHz F=1 GHz
TanD=0.001 TanD=0.001
Port
S2
Num=4
DRAIN
Port
D
Num=4
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet ATF-33143-BLK.PDF ] | |
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