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ATF-331M4-BLK PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 ATF-331M4-BLK
기능 Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package
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ATF-331M4-BLK 데이터시트, 핀배열, 회로
Agilent ATF-331M4 Low Noise
Pseudomorphic HEMT in a
Miniature Leadless Package
Data Sheet
Description
Agilent Technologies’s
ATF-331M4 is a high linearity,
low noise pHEMT housed in a
miniature leadless package.
The ATF-331M4’s small size and
low profile makes it ideal for the
design of hybrid modules and
other space-constraint devices.
Based on its featured perfor-
mance, ATF-331M4 is ideal for
the first or second stage of base
station LNA due to the excellent
combination of low noise figure
and enhanced linearity [1]. The
device is also suitable for appli-
cations in Wireless LAN,
WLL/RLL, MMDS, and other
systems requiring super low
noise figure with good intercept
in the 450 MHz to 10 GHz
frequency range.
Note:
1. From the same PHEMT FET family, the
smaller geometry ATF-34143 may also be
considered for the higher gain performance,
particularly in the higher frequency band
(1.8 GHz and up).
MiniPak 1.4 mm x 1.2 mm Package
Px
Pin Connections and
Package Marking
Source
Pin 3
Gate
Pin 2
Px
Drain
Pin 4
Source
Pin 1
Note:
Top View. Package marking provides orientation,
product identification and date code.
P= Device Type Code
x= Date code character. A different
character is assigned for each month
and year.
Features
• Low noise figure
• Excellent uniformity in product
specifications
• 1600 micron gate width
• Miniature leadless package
1.4 mm x 1.2 mm x 0.7 mm
• Tape-and-reel packaging option
available
Specifications
2 GHz; 4 V, 60 mA (Typ.)
• 0.6 dB noise figure
• 15 dB associated gain
• 19 dBm output power at 1 dB gain
compression
• 31 dBm output 3rd order intercept
Applications
• Tower mounted amplifier, low noise
amplifier and driver amplifier for
GSM/TDMA/CDMA base stations
• LNA for WLAN, WLL/RLL, MMDS
and wireless data infrastructures
General purpose discrete PHEMT for
other ultra low noise applications




ATF-331M4-BLK pdf, 반도체, 판매, 대치품
ATF-331M4 Typical Performance Curves
40
2V
3V
4V
30
40
30
2V
3V
4V
20 20
10 10
0
0 20 40 60 80 100
Ids (mA)
Figure 6. OIP3, IIP3 & Bias[1] at 2 GHz.
0
0 20 40 60 80 100
Ids (mA)
Figure 7. OIP3, IIP3 & Bias[1] at 900 MHz.
25
2V
3V
20 4V
15
10
5
0
0 20 40 60 80
Idsq (mA)
Figure 8. P1dB vs. Bias[1,2] 2 GHz.
100
25
2V
3V
4V
20
15
10
5
0
0 20 40 60 80
Idsq (mA)
Figure 9. P1dB vs. Bias[1] 900 MHz.
100
16
2V
3V
15 4V
1.4
1.2
14 1.0
13 0.8
12 0.6
11 0.4
10 0.2
0 20 40 60 80 100
Id (mA)
Figure 10. NF & Gain vs. Bias[1] at 2 GHz.
22
2V
3V
21 4V
1.4
1.2
20 1.0
19 0.8
18 0.6
17 0.4
16 0.2
0 20 40 60 80 100 120
Id (mA)
Figure 11. NF & Gain vs. Bias[1] at 900 MHz.
Notes:
1. Measurements made on fixed tuned
production test board that was tuned for
optimal gain match with reasonable noise
figure at 4V 60 mA bias. This circuit
represents a trade-off between an optimal
noise match, maximum gain match and a
realizable match based on production test
board requirements. Circuit losses have been
de-embedded from actual measurements.
2. Quiescent drain current, Idsq, is set with zero
RF drive applied. As P1dB is approached, the
drain current may increase or decrease
depending on frequency and dc bias point. At
lower values of Idsq the device is running
closer to class B as power output approaches
P1dB. This results in higher P1dB and higher
PAE (power added efficiency) when compared
to a device that is driven by a constant
current source as is typically done with active
biasing.
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ATF-331M4-BLK 전자부품, 판매, 대치품
ATF-331M4 Typical Scattering Parameters, VDS = 3V, IDS = 40 mA
Freq.
GHz
S11
Mag. Ang.
S21
dB Mag. Ang.
dB
0.5
0.82 -90.50
22.45 13.27 128.40
0.8
0.78 -117.70
19.31 9.24 113.30
1.0
0.77 -130.90
18.50 8.41 106.40
1.5
0.75 -150.40
15.23 5.77 93.93
1.8
0.74 -158.70
14.02 5.02 88.30
2.0
0.74 -162.70
13.79 4.89 85.10
2.5
0.72 -170.00
10.81 3.47 77.97
3.0
0.69 -174.10
9.60 3.02 71.63
4.0
0.71 163.70
7.13 2.27 53.03
5.0
0.73 150.50
5.46 1.87 41.40
6.0
0.71 141.50
4.37 1.65 28.50
7.0
0.73 124.40
3.34 1.47 14.10
8.0
0.74 113.40
3.14 1.44 6.00
9.0 0.76 98.20 2.94 1.40 -5.57
10.0 0.79 84.10
2.33 1.31 -19.10
11.0 0.86 62.40
0.44 1.05 -33.40
12.0 0.87 62.50
-0.38 0.96 -38.90
13.0 0.88 52.30
-1.20 0.87 -50.90
14.0 0.89 44.90
-1.79 0.81 -60.20
15.0 0.91 39.00
-3.64 0.66 -69.10
16.0 0.93 33.40
-5.30 0.54 -76.40
17.0 0.93 28.50
-5.40 0.54 -82.40
18.0 0.92 25.10
-6.34 0.48 -86.10
-27.54
-25.35
-24.58
-22.97
-21.94
-21.51
-20.18
-18.24
-17.33
-16.83
-16.31
-15.55
-15.19
-15.14
-14.94
-14.94
-14.47
-14.99
-15.55
-15.81
-18.64
-17.79
-17.92
S12
Mag. Ang.
0.042
0.054
0.059
0.071
0.080
0.084
0.098
0.122
0.136
0.144
0.153
0.167
0.174
0.175
0.179
0.179
0.189
0.178
0.167
0.162
0.117
0.129
0.127
53.80
47.10
45.10
43.03
42.33
42.13
41.53
40.67
30.70
25.67
18.13
8.10
3.57
-4.97
-16.07
-28.27
-32.20
-42.87
-50.87
-59.03
-65.67
-71.87
-76.40
S22
Mag. Ang.
0.38 -155.50
0.44 -165.77
0.46 -170.63
0.49 180.17
0.49 -184.17
0.50 173.27
0.50 166.80
0.52 163.70
0.52 139.43
0.52 136.10
0.54 118.23
0.54 111.83
0.54 110.90
0.55 95.33
0.55 80.50
0.55 67.80
0.61 61.73
0.66 50.97
0.70 41.63
0.73 32.17
0.76 26.13
0.78 19.77
0.80 14.87
MSG/MAG
dB
24.99
22.33
21.54
19.10
17.98
17.65
15.49
13.92
11.20
9.63
8.02
7.28
7.28
7.05
6.83
6.40
6.00
5.55
5.33
4.81
4.49
4.48
3.39
Typical Noise Parameters, VDS = 3V, IDS = 40 mA
Freq Fmin
GHz dB
Γopt
Mag.
Γopt
Ang.
Rn/50
0.50
0.90
1.00
1.50
1.80
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
0.37
0.41
0.42
0.46
0.49
0.51
0.55
0.59
0.68
0.77
0.86
0.95
1.04
1.13
1.22
0.377
0.367
0.366
0.365
0.37
0.374
0.392
0.416
0.479
0.553
0.627
0.69
0.733
0.742
0.709
0.7
24.5
31.1
61.6
77.8
87.9
110.5
129.6
159.2
179.4
-167.2
-157.6
-149.2
-139.1
-124.7
0.07
0.06
0.06
0.05
0.05
0.05
0.04
0.04
0.03
0.02
0.02
0.04
0.06
0.1
0.18
Ga
dB
21.42
18.53
18.28
15.95
15.42
14.61
13.33
12.25
10.5
9.06
8.05
7.13
6.38
5.97
5
40
30
MSG
20
10
MAG
0
|S21|2
-10
0 5 10 15
FREQUENCY (GHz)
Figure 19. MSG/MAG and |S21|2 vs.
Frequency at 3V, 40 mA.
20
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
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ATF-331M4-BLK

Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package

Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)

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