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ATF-34143 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 ATF-34143
기능 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
제조업체 Agilent(Hewlett-Packard)
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ATF-34143 데이터시트, 핀배열, 회로
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Technical Data
ATF-34143
Features
• Low Noise Figure
• Excellent Uniformity in
Product Specifications
• Low Cost Surface Mount
Small Plastic Package
SOT-343 (4 lead SC-70)
• Tape-and-Reel Packaging
Option Available
Specifications
1.9 GHz; 4 V, 60 mA (Typ.)
• 0.5 dB Noise Figure
• 17.5 dB Associated Gain
• 20 dBm Output Power at
1␣ dB Gain Compression
• 31.5 dBm Output 3rd Order
Intercept
Applications
• Low Noise Amplifier for
Cellular/PCS Base Stations
• LNA for WLAN, WLL/RLL,
LEO, and MMDS
Applications
• General Purpose Discrete
PHEMT for Other Ultra Low
Noise Applications
Surface Mount Package
SOT-343
Pin Connections and
Package Marking
DRAIN
SOURCE
SOURCE
GATE
Description
Agilent’s ATF-34143 is a high
dynamic range, low noise,
PHEMT housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
Based on its featured perfor-
mance, ATF-34143 is suitable for
applications in cellular and PCS
base stations, LEO systems,
MMDS, and other systems requir-
ing super low noise figure with
good intercept in the 450␣ MHz to
10 GHz frequency range.
Note: Top View. Package marking
provides orientation and identification.
“4P” = Device code
“x” = Date code character. A new
character is assigned for each month, year.




ATF-34143 pdf, 반도체, 판매, 대치품
ATF-34143 Typical Performance Curves
35
OIP3
30
25
20
15
20
15
P1dB
10
5 3V
4V
0
0 20 40 60 80 100 120 140
IDSQ (mA)
Figure 6. OIP3 and P1dB vs. IDS and
VDS Tuned for NF @ 4V, 60 mA at
2GHz. [1,2]
10
5
3V
4V
0
0 20 40 60 80 100 120
CURRENT (mA)
Figure 7. Associated Gain vs. Current
(Id) and Voltage (VD) at 2 GHz. [1,2]
1
0.8
0.6
0.4
0.2
3V
4V
0
0 20 40 60 80 100 120
CURRENT (mA)
Figure 8. Noise Figure vs. Current
(Id) and Voltage (VDS) at 2 GHz. [1,2]
35
OIP3
30
25
20
15
P1dB
10
5 3V
4V
0
0 20 40 60 80 100 120
IDSQ (mA)
Figure 9. OIP3 and P1dB vs. IDS and
VDS Tuned for NF @ 4 V, 60 mA at
900MHz. [1,2]
25
20
15
10
5
3V
4V
0
0 20 40 60 80 100 120
CURRENT (mA)
Figure 10. Associated Gain vs. Current
(Id) and Voltage (VD) at 900 MHz. [1,2]
0.7
0.6
0.5
0.4
0.3
0.2
0.1 3 V
4V
0
0 20 40 60 80 100 120
CURRENT (mA)
Figure 11. Noise Figure vs. Current
(Id) and Voltage (VDS) at 900 MHz. [1,2]
1.2 25
1.0
20
0.8
0.6 15
0.4
0.2
0
0
60 mA
40 mA
20 mA
10
60 mA
40 mA
20 mA
2.0 4.0 6.0
5
0 1.0 2.0 3.0 4.0 5.0 6.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and
Current at 4 V.
Figure 13. Associated Gain vs.
Frequency and Current at 4 V.
Notes:
1. Measurements made on a fixed toned production test board that was tuned for optimal gain match with reasonable noise figure at 4 V,
60 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match, and a realizable match based on
production test board requirements. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device
is running closer to class B as power output approaches P1dB. This results in higher PAE (power added efficiency) when compared to
a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V and
IDSQ␣ =␣ 10␣ mA, Id increases to 62 mA as a P1dB of +19 dBm is approached.

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ATF-34143 전자부품, 판매, 대치품
ATF-34143 Typical Scattering Parameters, VDS = 3 V, IDS = 20 mA
Freq.
S11
S21
S12
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang.
0.5 0.96 -37 20.07 10.079 153 -29.12 0.035 68
0.8 0.91 -60 19.68 9.642 137 -26.02 0.050 56
1.0 0.87 -76 18.96 8.867 126 -24.29 0.061 48
1.5 0.81 -104 17.43 7.443 106 -22.27 0.077 34
1.8 0.78 -115 16.70 6.843 98 -21.62 0.083 28
2.0 0.75 -126 16.00 6.306 90 -21.11 0.088 23
2.5 0.72 -145 14.71 5.438 75 -20.45 0.095 15
3.0 0.69 -162 13.56 4.762 62 -19.83 0.102
7
4.0 0.65 166 11.61 3.806 38 -19.09 0.111 -8
5.0 0.64 139 10.01 3.165 16 -18.49 0.119 -21
6.0 0.65 114 8.65 2.706 -5 -18.06 0.125 -35
7.0 0.66
89 7.33 2.326 -27 -17.79 0.129 -49
8.0 0.69
67 6.09 2.017 -47 -17.52 0.133 -62
9.0 0.72
48 4.90 1.758 -66 -17.39 0.135 -75
10.0 0.75
30 3.91 1.568 -86 -17.08 0.140 -88
11.0 0.77
10 2.88 1.393 -105 -16.95 0.142 -103
12.0 0.80 -10 1.74 1.222 -126 -16.95 0.142 -118
13.0 0.83 -29 0.38 1.045 -145 -17.39 0.135 -133
14.0 0.85 -44 -0.96 0.895 -161 -17.86 0.128 -145
15.0 0.86 -55 -2.06 0.789 -177 -18.13 0.124 -156
16.0 0.85 -72 -3.09 0.701 166 -18.13 0.124 -168
17.0 0.85 -88 -4.22 0.615 149 -18.06 0.125 177
18.0 0.88 -101 -5.71 0.518 133 -18.94 0.113 165
S22
Mag. Ang.
0.40 -35
0.34 -56
0.32 -71
0.29 -98
0.28 -110
0.26 -120
0.25 -140
0.23 -156
0.22 174
0.22 146
0.23 118
0.25 91
0.29 67
0.34 46
0.39 28
0.43 10
0.47 -10
0.53 -28
0.58 -42
0.62 -57
0.65 -70
0.68 -85
0.71 -103
MSG/MAG
dB
24.59
22.85
21.62
19.85
19.16
18.55
17.58
16.69
15.35
14.25
13.35
10.91
9.71
8.79
8.31
7.56
6.83
6.18
5.62
5.04
3.86
3.00
2.52
ATF-34143 Typical Noise Parameters
VDS = 3 V, IDS = 20 mA
Freq.
GHz
Fmin
dB
Γopt
Mag. Ang.
Rn/50
-
0.5 0.10 0.90 13 0.16
0.9 0.11 0.85 27 0.14
1.0 0.11 0.84 31 0.13
1.5 0.14 0.77 48 0.11
1.8 0.17 0.74 57 0.10
2.0 0.19 0.71 66 0.09
2.5 0.23 0.65 83 0.07
3.0 0.29 0.59 102 0.06
4.0 0.42 0.51 138 0.03
5.0 0.54 0.45 174 0.03
6.0
0.67 0.42
-151 0.05
7.0
0.79 0.42
-118 0.10
8.0 0.92 0.45 -88 0.18
9.0 1.04 0.51 -63 0.30
10.0 1.16 0.61
-43 0.46
Ga
dB
21.8
18.3
17.8
16.4
16.0
15.6
14.8
14.0
12.6
11.4
10.3
9.4
8.6
8.0
7.5
25
20
MSG
15
10
S21
5
MAG
0
-5
-10
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)
Figure 23. MSG/MAG and |S21|2 vs.
Frequency at 3 V, 20 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values
are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.

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관련 데이터시트

부품번호상세설명 및 기능제조사
ATF-34143

Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

ETC
ETC
ATF-34143

Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)

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