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PDF ATF-34143-TR1 Data sheet ( Hoja de datos )
| Número de pieza | ATF-34143-TR1 | |
| Descripción | Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package | |
| Fabricantes | Agilent(Hewlett-Packard) | |
| Logotipo | .gif "Agilent(Hewlett-Packard)"){kind=logo} |
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Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Technical Data
ATF-34143
Features
• Low Noise Figure
• Excellent Uniformity in
Product Specifications
• Low Cost Surface Mount
Small Plastic Package
SOT-343 (4 lead SC-70)
• Tape-and-Reel Packaging
Option Available
Specifications
1.9 GHz; 4 V, 60 mA (Typ.)
• 0.5 dB Noise Figure
• 17.5 dB Associated Gain
• 20 dBm Output Power at
1␣ dB Gain Compression
• 31.5 dBm Output 3rd Order
Intercept
Applications
• Low Noise Amplifier for
Cellular/PCS Base Stations
• LNA for WLAN, WLL/RLL,
LEO, and MMDS
Applications
• General Purpose Discrete
PHEMT for Other Ultra Low
Noise Applications
Surface Mount Package
SOT-343
Pin Connections and
Package Marking
DRAIN
SOURCE
SOURCE
GATE
Description
Agilent’s ATF-34143 is a high
dynamic range, low noise,
PHEMT housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
Based on its featured perfor-
mance, ATF-34143 is suitable for
applications in cellular and PCS
base stations, LEO systems,
MMDS, and other systems requir-
ing super low noise figure with
good intercept in the 450␣ MHz to
10 GHz frequency range.
Note: Top View. Package marking
provides orientation and identification.
“4P” = Device code
“x” = Date code character. A new
character is assigned for each month, year.
1 page  
ATF-34143 Typical Performance Curves, continued
25
85 °C
25 °C
-40 °C
20
1.5
1.0
15 0.5
10 0
0
2000
4000
6000 8000
FREQUENCY (GHz)
Figure 14. Fmin and Ga vs. Frequency
and Temperature at VDS = 4 V, IDS = 60 mA.
33
31
29
27 OIP3
25
23
P1dB
21
85 °C
25 °C
-40 °C
19
17
0 2000 4000 6000 8000
FREQUENCY (MHz)
Figure 15. P1dB, IP3 vs. Frequency and
Temperature at VDS = 4 V, IDS = 60 mA.[1]
35 5.0
4.5
30
Gain 4.0
OP1dB
25 OIP3 3.5
NF
20 3.0
2.5
15 2.0
10 1.5
1.0
5
0.5
00
0 20 40 60 80 100 120 140
IDSQ (mA)
Figure 16. NF, Gain, OP1dB and OIP3
vs. IDS at 4 V and 3.9 GHz Tuned for
Noise Figure.[1]
30 5.0
27 4.5
24 4.0
21 3.5
18
Gain
OP1dB
3.0
15 OIP3 2.5
NF
12 2.0
9 1.5
6 1.0
3 0.5
00
0 20 40 60 80 100 120
IDSQ (mA)
Figure 17. NF, Gain, OP1dB and OIP3
vs. IDS at 4 V and 5.8 GHz Tuned for
Noise Figure.[1]
25
20
15
10
5
3V
0 4V
-5
0 50 100 150
IDS (mA)
Figure 18. P1dB vs. IDS Active Bias
Tuned for NF @ 4 V, 60 mA at 2 GHz.
25
20
15
10
5
3V
0 4V
-5
0 50 100 150
IDS (mA)
Figure 19. P1dB vs. IDS Active Bias
Tuned for min NF @ 4 V, 60 mA at
900MHz.
Note:
1. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device
is running closer to class B as power output approaches P1dB. This results in higher PAE (power added efficiency) when compared to
a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V and
IDSQ␣ =␣ 10␣ mA, Id increases to 62 mA as a P1dB of +19 dBm is approached.
5 Page 
Noise Parameter
Applications Information
Fmin values at 2␣ GHz and higher
are based on measurements while
the Fmins below 2 GHz have been
extrapolated. The Fmin values are
based on a set of 16 noise figure
measurements made at 16
different impedances using an
ATN NP5 test system. From these
measurements, a true Fmin is
calculated. Fmin represents the
true minimum noise figure of the
device when the device is pre-
sented with an impedance
matching network that trans-
forms the source impedance,
typically 50Ω, to an impedance
represented by the reflection
coefficient Γo. The designer must
design a matching network that
will present Γo to the device with
minimal associated circuit losses.
The noise figure of the completed
amplifier is equal to the noise
figure of the device plus the
losses of the matching network
preceding the device. The noise
figure of the device is equal to
Fmin only when the device is
presented with Γo. If the reflec-
tion coefficient of the matching
network is other than Γo, then the
noise figure of the device will be
greater than Fmin based on the
following equation.
NF = Fmin + 4 Rn
|Γs – Γo | 2
Zo (|1 + Γo| 2) (1 – Γs|2)
Where Rn/Zo is the normalized
noise resistance, Γo is the opti-
mum reflection coefficient
required to produce Fmin and Γs is
the reflection coefficient of the
source impedance actually
presented to the device. The
losses of the matching networks
are non-zero and they will also
add to the noise figure of the
device creating a higher amplifier
noise figure. The losses of the
matching networks are related to
the Q of the components and
associated printed circuit board
loss. Γo is typically fairly low at
higher frequencies and increases
as frequency is lowered. Larger
gate width devices will typically
have a lower Γo as compared to
narrower gate width devices.
Typically for FETs, the higher Γo
usually infers that an impedance
much higher than 50Ω is required
for the device to produce Fmin. At
VHF frequencies and even lower
L Band frequencies, the required
impedance can be in the vicinity
of several thousand ohms.
Matching to such a high imped-
ance requires very hi-Q compo-
nents in order to minimize circuit
losses. As an example at 900 MHz,
when airwwound coils (Q > 100)
are used for matching networks,
the loss can still be up to 0.25 dB
which will add directly to the
noise figure of the device. Using
muiltilayer molded inductors with
Qs in the 30 to 50 range results in
additional loss over the airwound
coil. Losses as high as 0.5 dB or
greater add to the typical 0.15 dB
Fmin of the device creating an
amplifier noise figure of nearly
0.65 dB. A discussion concerning
calculated and measured circuit
losses and their effect on ampli-
fier noise figure is covered in
Agilent Application 1085.
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet ATF-34143-TR1.PDF ] | |
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