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ATF-35143 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 ATF-35143
기능 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
제조업체 Agilent(Hewlett-Packard)
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ATF-35143 데이터시트, 핀배열, 회로
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Technical Data
ATF-35143
Features
• Low Noise Figure
• Excellent Uniformity in
Product Specifications
• Low Cost Surface Mount
Small Plastic Package
SOT-343 (4 lead SC-70)
• Tape-and-Reel Packaging
Option Available
Specifications
1.9 GHz; 2 V, 15 mA (Typ.)
• 0.4 dB Noise Figure
• 18 dB Associated Gain
• 11 dBm Output Power at
1␣ dB Gain Compression
• 21 dBm Output 3rd Order
Intercept
Applications
• Low Noise Amplifier for
Cellular/PCS Handsets
• LNA for WLAN, WLL/RLL,
LEO, and MMDS
Applications
• General Purpose Discrete
PHEMT for Other Ultra Low
Noise Applications
Surface Mount Package
SOT-343
Description
Agilent’s ATF-35143 is a high
dynamic range, low noise,
PHEMT housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
Pin Connections and
Package Marking
DRAIN
SOURCE
SOURCE
GATE
Note: Top View. Package marking
provides orientation and identification.
“5P” = Device code
“x” = Date code character. A new
character is assigned for each month, year.
Based on its featured perfor-
mance, ATF-35143 is suitable for
applications in cellular and PCS
base stations, LEO systems,
MMDS, and other systems requir-
ing super low noise figure with
good intercept in the 450␣ MHz to
10 GHz frequency range.
Other PHEMT devices in this
family are the ATF-34143 and the
ATF-33143. The typical specifica-
tions for these devices at 2␣ GHz
are shown in the table below:
Part No.
ATF-33143
ATF-34143
ATF-35143
Gate Width
1600 µ
800 µ
400 µ
Bias Point
4 V, 80 mA
4 V, 60 mA
2 V, 15 mA
NF (dB) Ga (dB) OIP3 (dBm)
0.5 15.0
33.5
0.5 17.5
31.5
0.4 18.0
21.0




ATF-35143 pdf, 반도체, 판매, 대치품
ATF-35143 Typical Performance Curves
30
OIP3
25
20
15
P1dB
10
2V
5 3V
4V
0
0 10 20 30 40 50 60
IDSQ (mA)
Figure 6. OIP3 and P1dB vs. Bias at
2GHz. [1,2]
30
25
OIP3
20
15
P1dB
10 2 V
3V
4V
5
0 10 20 30 40 50 60
IDSQ (mA)
Figure 7. OIP3 and P1dB vs. Bias at
900MHz. [1,2]
20
19 Ga
2.5
2V
3V
4V 2
24
22 Ga
2.5
2V
3V
4V 2
18 1.5 20 1.5
17 1 18 1
NF NF
16 0.5 16 0.5
15 0
0 10 20 30 40 50 60
IDSQ (mA)
Figure 8. NF and Ga vs. Bias at 2GHz. [1]
14
0 10 20 30 40 50
IDSQ (mA)
Figure 9. NF and Ga vs. Bias at
900MHz. [1]
0
60
25
20
15
10
5
0
2V
3V
4V
-5
0 20 40 60 80
IDS (mA)
Figure 10. P1dB vs. Bias (Active Bias)
[1]
20
15
10
5
0 2V
3V
4V
-5
0 20 40 60 80
IDS (mA)
Figure 11. P1dB vs. Bias (Active Bias)
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2 V
15␣ mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on
production test board requirements. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device
is running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency)
when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS
= 4 V and IDSQ␣ =␣ 5␣ mA, Id increases to 30 mA as a P1dB of +15 dBm is approached.

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ATF-35143 전자부품, 판매, 대치품
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 10 mA
Freq.
S11
S21
S12
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
0.99 -18.75 15.89
0.97 -29.11 15.79
0.95 -38.28 15.61
0.91 -55.52 15.17
0.89 -63.78 14.92
0.86 -71.82 14.65
0.81 -87.59 14.11
0.76 -103.22 13.54
0.66 -134.81 12.40
0.61 -165.34 11.29
0.58 165.88 10.27
0.57 137.00 9.27
0.58 110.78 8.33
0.61 86.75 7.32
0.65 66.25 6.44
0.69 46.88 5.54
0.72 27.76 4.56
0.74 8.62 3.45
0.77 -5.28 2.33
0.82 -16.03 1.29
0.82 -28.32 0.19
0.84 -40.43 -0.87
0.86 -56.14 -1.99
6.23 164.76 -32.40 0.024 77.63
6.16 155.98 -28.87 0.036 70.58
6.03 148.42 -26.56 0.047 64.88
5.73 133.92 -23.61 0.066 54.16
5.57 127.01 -22.62 0.074 49.11
5.40 120.27 -21.72 0.082 44.08
5.08 107.36 -20.35 0.096 34.60
4.76 95.04 -19.41 0.107 25.71
4.17 71.95 -18.27 0.122 9.04
3.67 50.43 -17.65 0.131 -5.97
3.26 30.28 -17.33 0.136 -20.15
2.91 10.68 -17.14 0.139 -33.84
2.61 -8.09 -17.14 0.139 -45.60
2.32 -26.38 -17.20 0.138 -57.65
2.10 -43.90 -17.20 0.138 -68.22
1.89 -61.97 -17.27 0.137 -79.30
1.69 -79.90 -17.39 0.135 -90.87
1.49 -97.18 -17.79 0.129 -102.19
1.31 -112.92 -18.20 0.123 -110.80
1.16 -128.66 -18.56 0.118 -120.09
1.02 -144.87 -18.79 0.115 -129.92
0.91 -159.49 -18.79 0.115 -139.60
0.80 -175.19 -19.33 0.108 -149.17
S22 MSG/MAG
Mag. Ang.
dB
0.63 -14.09
0.61 -19.69
0.60 -26.10
0.57 -38.73
0.56 -44.79
0.54 -50.70
0.51 -61.95
0.47 -72.47
0.41 -91.47
0.34 -110.05
0.27 -129.24
0.21 -150.49
0.17 -174.77
0.13 154.01
0.11 118.18
0.14 78.36
0.19 49.57
0.26 29.95
0.33 9.45
0.39 -7.98
0.45 -22.30
0.51 -32.23
0.57 -44.43
24.14
22.30
21.08
19.39
18.75
18.19
17.23
16.48
15.34
14.47
13.80
13.21
12.73
10.69
9.85
9.16
8.34
7.35
6.51
6.51
5.48
5.24
4.72
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 10 mA
Freq.
GHz
Fmin
dB
Γopt
Mag. Ang.
Rn/50
-
0.5 0.10 0.88
5.0 0.15
0.9 0.11 0.84 14.0 0.15
1.0 0.12 0.83 16.0 0.15
1.5 0.17 0.77 26.0 0.15
1.8 0.20 0.74 31.9 0.15
2.0 0.23 0.71 37.3 0.14
2.5 0.29 0.66 48.6 0.14
3.0 0.34 0.60 60.6 0.12
4.0 0.46 0.52 86.8 0.12
5.0 0.58 0.45 115.3 0.08
6.0 0.69 0.40 145.8 0.05
7.0 0.81 0.37 177.7 0.05
8.0 0.92 0.35 -149.3 0.07
9.0 1.04 0.35 -115.6 0.12
10.0
1.16
0.37
-81.8
0.22
Ga
dB
20.5
19.0
18.6
17.5
16.9
16.4
15.7
15.0
13.6
12.4
11.3
10.3
9.5
8.8
8.3
30
25
20
MSG
15
10 S21
MAG
5
0
-5
0 5 10 15 20
FREQUENCY (GHz)
Figure 19. MSG/MAG and |S21|2 vs.
Frequency at 2 V, 10 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at sixteen different impedances using an ATN NP5 test system. From these
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.

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관련 데이터시트

부품번호상세설명 및 기능제조사
ATF-35143

Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)
ATF-35143

Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)

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