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PDF ATF-35143-BLK Data sheet ( Hoja de datos )
| Número de pieza | ATF-35143-BLK | |
| Descripción | Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package | |
| Fabricantes | Agilent(Hewlett-Packard) | |
| Logotipo | .gif "Agilent(Hewlett-Packard)"){kind=logo} |
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Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Technical Data
ATF-35143
Features
• Low Noise Figure
• Excellent Uniformity in
Product Specifications
• Low Cost Surface Mount
Small Plastic Package
SOT-343 (4 lead SC-70)
• Tape-and-Reel Packaging
Option Available
Specifications
1.9 GHz; 2 V, 15 mA (Typ.)
• 0.4 dB Noise Figure
• 18 dB Associated Gain
• 11 dBm Output Power at
1␣ dB Gain Compression
• 21 dBm Output 3rd Order
Intercept
Applications
• Low Noise Amplifier for
Cellular/PCS Handsets
• LNA for WLAN, WLL/RLL,
LEO, and MMDS
Applications
• General Purpose Discrete
PHEMT for Other Ultra Low
Noise Applications
Surface Mount Package
SOT-343
Description
Agilent’s ATF-35143 is a high
dynamic range, low noise,
PHEMT housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
Pin Connections and
Package Marking
DRAIN
SOURCE
SOURCE
GATE
Note: Top View. Package marking
provides orientation and identification.
“5P” = Device code
“x” = Date code character. A new
character is assigned for each month, year.
Based on its featured perfor-
mance, ATF-35143 is suitable for
applications in cellular and PCS
base stations, LEO systems,
MMDS, and other systems requir-
ing super low noise figure with
good intercept in the 450␣ MHz to
10 GHz frequency range.
Other PHEMT devices in this
family are the ATF-34143 and the
ATF-33143. The typical specifica-
tions for these devices at 2␣ GHz
are shown in the table below:
Part No.
ATF-33143
ATF-34143
ATF-35143
Gate Width
1600 µ
800 µ
400 µ
Bias Point
4 V, 80 mA
4 V, 60 mA
2 V, 15 mA
NF (dB) Ga (dB) OIP3 (dBm)
0.5 15.0
33.5
0.5 17.5
31.5
0.4 18.0
21.0
1 page  
ATF-35143 Typical Performance Curves, continued
1.50 25
1.25
20
1.00
5 mA
15 mA
30 mA
0.75 15
0.50
0.25
5 mA
15 mA
30 mA
0
0 2 4 6 8 10
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and
Current at 2V.
10
5
02 4 6 8
FREQUENCY (GHz)
Figure 13. Associated Gain vs.
Frequency and Current at 2V.
10
22 1.0 25
20 0.8
20
18 0.6
16
25°C
-40°C 0.4
85°C
15
25°C
-40°C
85°C
10
14 0.2
12 0
0 2 4 68
FREQUENCY (GHz)
Figure 14. Fmin and Ga vs. Frequency
and Temperature, VDS= 2 V, I DS= 15 mA.
25 2.5
20 2
15 1.5
10 1
5
P1dB 0.5
OIP3
Gain
NF
00
0 20 40 60 80
IDS (mA)
Figure 16. OIP3, P1dB, NF and Gain vs.
Bias[1] (Active Bias, 2 V, 3.9 GHz).
5
0 2 4 68
FREQUENCY (GHz)
Figure 15. OIP3 and P1dB vs. Frequency
and Temperature[1,2], VDS= 2 V, I DS= 15mA.
25 3
20 2.5
15 2
10 1.5
51
P1dB
0 OIP3 0.5
Gain
NF
-5 0
0 20 40 60 80
IDS (mA)
Figure 17. OIP3, P1dB, NF and Gain vs.
Bias[1] (Active Bias, 2 V, 5.8 GHz).
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 2 V 15mA bias. This circuit represents a trade-off
between optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have
been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq the device is
running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when
compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V
and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15 dBm is approached.
5 Page 
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 15 mA
Freq.
S11
S21
S12
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
0.99 -19.76 17.20
0.96 -30.58 17.08
0.94 -40.14 16.86
0.90 -58.04 16.35
0.87 -66.61 16.06
0.84 -74.88 15.75
0.78 -91.02 15.13
0.73 -106.95 14.50
0.63 -138.86 13.24
0.58 -169.42 12.05
0.56 162.05 10.97
0.55 133.54 9.93
0.56 107.88 8.96
0.60 84.56 7.95
0.64 64.57 7.06
0.68 45.84 6.16
0.71 27.11 5.19
0.74 8.18 4.09
0.77 -5.58 2.98
0.82 -16.18 1.96
0.82 -28.41 0.88
0.85 -40.49 -0.15
0.86 -56.20 -1.25
7.24 164.03 -33.15 0.022 76.95
7.14 154.94 -29.90 0.032 69.88
6.97 147.12 -27.54 0.042 64.59
6.57 132.22 -24.58 0.059 54.00
6.35 125.16 -23.48 0.067 49.23
6.13 118.36 -22.62 0.074 44.39
5.71 105.32 -21.41 0.085 35.29
5.31 93.02 -20.45 0.102 27.00
4.59 70.17 -19.41 0.107 11.47
4.00 49.09 -18.79 0.115 -2.18
3.53 29.39 -18.34 0.121 -15.36
3.14 10.23 -18.06 0.125 -27.97
2.81 -8.11 -17.92 0.127 -38.89
2.50 -26.04 -17.86 0.128 -50.41
2.26 -43.28 -17.72 0.130 -60.57
2.03 -61.06 -17.59 0.132 -71.45
1.82 -78.75 -17.59 0.132 -83.32
1.60 -95.88 -17.79 0.129 -94.36
1.41 -111.57 -18.06 0.125 -103.78
1.25 -127.09 -18.27 0.122 -113.43
1.11 -143.31 -18.42 0.120 -123.35
0.98 -157.87 -18.49 0.119 -134.06
0.87 -173.65 -18.86 0.114 -144.46
S22 MSG/MAG
Mag. Ang.
dB
0.60 -14.39
0.58 -20.00
0.57 -26.48
0.54 -39.05
0.52 -45.00
0.50 -50.83
0.47 -61.71
0.44 -71.87
0.37 -89.81
0.31 -107.23
0.24 -125.21
0.19 -145.42
0.14 -168.81
0.11 158.79
0.09 118.59
0.12 75.36
0.18 46.94
0.25 27.91
0.31 7.94
0.37 -8.87
0.44 -23.42
0.50 -32.96
0.56 -44.64
25.17
23.47
22.20
20.47
19.78
19.19
18.27
17.47
16.32
15.42
14.66
14.00
12.23
10.87
10.16
9.55
8.80
7.86
7.09
7.04
6.09
5.87
5.41
ATF-35143 Typical Noise Parameters
VDS = 3 V, IDS = 15 mA
Freq.
GHz
Fmin
dB
Γopt
Mag. Ang.
Rn/50
-
0.5 0.11 0.86
3.5 0.17
0.9 0.15 0.81 12.1 0.16
1.0 0.16 0.80 14.3 0.16
1.5 0.21 0.73 25.1 0.15
1.8 0.24 0.69 31.6 0.14
2.0 0.26 0.66 35.9 0.20
2.5 0.31 0.60 47.2 0.17
3.0 0.37 0.55 59.4 0.15
4.0 0.47 0.46 86.0 0.11
5.0 0.58 0.40 115.4 0.07
6.0 0.68 0.36 146.8 0.05
7.0 0.79 0.33 179.8 0.05
8.0 0.89 0.32 -146.1 0.07
9.0 1.00 0.32 -111.5 0.13
10.0
1.10
0.33
-76.8
0.22
Ga
dB
21.2
19.9
19.6
18.2
17.6
17.2
16.3
15.6
14.2
12.9
11.8
10.8
10.0
9.3
8.8
30
25
20 MSG
15
10 S21
MAG
5
0
-5
0 5 10 15 20
FREQUENCY (GHz)
Figure 23. MSG/MAG and |S21|2 vs.
Frequency at 3 V, 15 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are
based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measure-
ments a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
11 Page | ||
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| PDF Descargar | [ Datasheet ATF-35143-BLK.PDF ] | |
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