|
|
PDF AU5517D Data sheet ( Hoja de datos )
| Número de pieza | AU5517D | |
| Descripción | Dual operational transconductance amplifier | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AU5517D (archivo pdf) en la parte inferior de esta página. Total 18 Páginas | ||
|
No Preview Available !
INTEGRATED CIRCUITS
NE5517/NE5517A/AU5517
Dual operational transconductance
amplifier
Product data
Replaces NE5517/NE5517A dated 2001 Aug 03
2002 Dec 06
Philips
Semiconductors
1 page  
Philips Semiconductor
Dual operational transconductance amplifier
Product data
NE5517/NE5517A/
AU5517
DC ELECTRICAL CHARACTERISTICS1
SYMBOL
PARAMETER
TEST CONDITIONS
AU5517/NE5517
Min Typ Max
NE5517A
Min Typ Max
UNIT
VOS
VOS
IOS
IBIAS
gM
Input offset voltage
∆VOS/∆T
VOS including diodes
Input offset change
Input offset current
∆IOS/∆T
Input bias current
∆IB/∆T
Forward transconductance
Over temperature range
IABC 5 µA
Avg. TC of input offset voltage
Diode bias current (ID) = 500 µA
5 µA ≤ IABC ≤ 500 µA
Avg. TC of input offset current
Over temperature range
Avg. TC of input current
Over temperature range
6700
5400
0.4
0.3
7
0.5
0.1
0.1
0.001
0.4
1
0.01
9600
5
5
5
0.6
5
8
1300
7700
4000
0.4
0.3
7
0.5
0.1
0.1
0.001
0.4
1
0.01
9600
2
5
2
2
3
0.6
5
7
1200
mV
mV
mV
µV/°C
mV
mV
µA
µA/°C
µA
µA
µA/°C
µmho
µmho
IOUT
VOUT
ICC
CMRR
gM tracking
Peak output current
Peak output voltage
Positive
Negative
Supply current
VOS sensitivity
Positive
Negative
Common-mode rejection
ration
RL = 0, IABC =5 µA
RL = 0, IABC = 500 µA
RL = 0
RL = ∞, 5 µA ≤ IABC ≤ 500 µA
RL = ∞, 5 µA ≤ IABC ≤ 500 µA
IABC = 500 µA, both channels
∆ VOS/∆ V+
∆ VOS/∆ V–
0.3
5
350 500 650
300
+12 +14.2
–12 –14.4
2.6
4
20 150
20 150
80 110
0.3
35
7
350 500 650
300
+12 +14.2
–12 –14.4
2.6
4
20 150
20 150
80 110
dB
µA
µA
µA
V
V
mA
µV/V
µV/V
dB
Common-mode range
Crosstalk
Referred to input2
20 Hz < f < 20 kHz
±12 ±13.5
100
±12 ±13.5
100
V
dB
IIN Differential input current
IABC = 0, input = ±4 V
0.02 100
0.02 10
nA
Leakage current
IABC = 0 (Refer to test circuit)
0.2 100
0.2 5
nA
RIN Input resistance
10 26
10 26
kΩ
BW Open-loop bandwidth
2 2 MHz
SR Slew rate
Unity gain compensated
50
50 V/µs
INBUFFER Buffer input current
5
0.4 5
0.4 5
µA
VOBUFFER Peak buffer output voltage 5 10
10
V
∆VBE of buffer
Refer to Buffer VBE test circuit 3
0.5 5
0.5 5
mV
NOTES:
1. These specifications apply for VS = ±15 V, Tamb = 25 °C, amplifier bias current (IABC) = 500 µA, Pins 2 and 15 open unless otherwise
specified. The inputs to the buffers are grounded and outputs are open.
2. These specifications apply for VS = ±15 V, IABC = 500 µA, ROUT = 5 kΩ connected from the buffer output to –VS and the input of the buffer is
connected to the transconductance amplifier output.
3. VS = ±15, ROUT = 5 kΩ connected from Buffer output to –VS and 5 µA ≤ IABC ≤ 500 µA.
2002 Dec 06
5
5 Page 
Philips Semiconductor
Dual operational transconductance amplifier
Product data
NE5517/NE5517A/
AU5517
APPLICATION HINTS
To hold the transconductance gM within the linear range, IABC
should be chosen not greater than 1 mA. The current mirror ratio
should be as accurate as possible over the entire current range. A
current mirror with only two transistors is not recommended. A
suitable current mirror can be built with a PNP transistor array which
causes excellent matching and thermal coupling among the
transistors. The output current range of the DAC normally reaches
from 0 to –2 mA. In this application, however, the current range is
set through RREF (10 kΩ) to 0 to –1 mA.
IDACMAX
+
2
@
VREF
RREF
+
2
@
5V
10kW
+
1mA
VC
+VCC
R4 = R2/ /R3 3 +
R1
11 1
IABC
NE5517
57
VIN
R2
–
4
6
IOUT
RL
R3
TYPICAL VALUES: R1 = 47k
R2 = 10k
R3 = 200Ω
R4 = 200Ω
RL = 100k
RS = 47k
Figure 10.
INT
+VCC
8
VOUT
RS
INT
–VCC
SL00315
VIN1
VC
VIN2
+VCC
10k
RIN
1k
15k
RP
+VCC
RD
30k
3+
11
NE5517/A
–
4
IABC
1
RL
10k
RC
10k
RIN
1k
RP
+VCC
14 +
15k 15
IABC
NE5517/A
RD
–6
13
16
12
10
RL
10k
INT
+VCC
8
VOUT1
5.1k
–VCC
+VCC
9
VOUT2
RS
Figure 11. Gain-Controlled Stereo Amplifier
–VCC
INT
SL00316
2002 Dec 06
11
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet AU5517D.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AU5517 | Dual Operational Transconductance Amplifier |  ON Semiconductor |
| AU5517D | Dual operational transconductance amplifier | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |