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부품번호 | M27W800-120B6TR 기능 |
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기능 | 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM | ||
제조업체 | STMicroelectronics | ||
로고 | |||
M27W800
8 Mbit (1Mb x 8 or 512Kb x 16)
Low Voltage UV EPROM and OTP EPROM
s 2.7V to 3.6V LOW VOLTAGE in READ
OPERATION
s ACCESS TIME:
– 90ns at VCC = 3.0V to 3.6V
– 100ns at VCC = 2.7V to 3.6V
s BYTE-WIDE or WORD-WIDE
CONFIGURABLE
s 8 Mbit MASK ROM REPLACEMENT
s LOW POWER CONSUMPTION
– Active Current 30mA at 8MHz
– Standby Current 15µA
s PROGRAMMING VOLTAGE: 12.5V ± 0.25V
s PROGRAMMING TIME: 50µs/word
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: B2h
DESCRIPTION
The M27W800 is a low voltage 8 Mbit EPROM of-
fered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems requiring large data or
program storage. It is organised as either 1 Mbit
words of 8 bit or 512 Kbit words of 16 bit. The pin-
out is compatible with a 8 Mbit Mask ROM.
The M27W800 operates in the read mode with a
supply voltage as low as 2.7V. The decrease in
operating power allows either a reduction of the
size of the battery or an increase in the time be-
tween battery recharges.
The FDIP42W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written rapidly to
the device by following the programming proce-
dure.
For applications where the content is programmed
only one time and erasure is not required, the
M27W800 is offered in PDIP42 and PLCC44 pack-
age.
42
1
FDIP42W (F)
42
1
PDIP42 (B)
PLCC44 (K)
Figure 1. Logic Diagram
VCC
19
A0-A18
E
G
BYTEVPP
M27W800
Q15A–1
15
Q0-Q14
VSS
AI03601
March 2000
1/15
M27W800
Table 5. AC Measurement Conditions
Input Rise and Fall Times
Input Pulse Voltages
Input and Output Timing Ref. Voltages
High Speed
≤ 10ns
0 to 3V
1.5V
Standard
≤ 20ns
0.4V to 2.4V
0.8V and 2V
Figure 3. AC Testing Input Output Waveform
High Speed
3V
0V
Standard
2.4V
0.4V
1.5V
2.0V
0.8V
AI01822
Figure 4. AC Testing Load Circuit
1.3V
1N914
DEVICE
UNDER
TEST
3.3kΩ
CL
OUT
CL = 30pF for High Speed
CL = 100pF for Standard
CL includes JIG capacitance
AI01823B
Table 6. Capacitance (1) (TA = 25 °C, f = 1 MHz)
Symbol
Parameter
Input Capacitance (except BYTEVPP)
CIN
Input Capacitance (BYTEVPP)
COUT Output Capacitance
Note: 1. Sampled only, not 100% tested.
Test Condition
VIN = 0V
VIN = 0V
VOUT = 0V
Min Max Unit
10 pF
120 pF
12 pF
4/15
4페이지 Figure 6. Byte-Wide Read Mode AC Waveforms
M27W800
A–1,A0-A18
E
G
Q0-Q7
VALID
tAVQV
tGLQV
tELQV
Note: BYTEVPP = VIL.
Figure 7. BYTE Transition AC Waveforms
tAXQX
VALID
tEHQZ
tGHQZ
Hi-Z
AI01597B
A0-A18
VALID
A–1
BYTEVPP
Q0-Q7
Q8-Q15
tAVQV
VALID
tAXQX
tBLQX
tBLQZ
tBHQV
DATA OUT
Hi-Z
DATA OUT
AI01598C
Note: Chip Enable (E) and Output Enable (G) = VIL.
7/15
7페이지 | |||
구 성 | 총 15 페이지수 | ||
다운로드 | [ M27W800-120B6TR.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
M27W800-120B6TR | 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |