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PDF FMM7G30US60N Data sheet ( Hoja de datos )
| Número de pieza | FMM7G30US60N | |
| Descripción | Compact & Complex Module | |
| Fabricantes | Fairchild Semiconductor | |
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FMM7G30US60N
Compact & Complex Module
IGBT
General Description
Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It’s
designed for the applications such as motor control and
general inverters where short-circuit ruggedness is
required.
Features
• Short Circuit rated Time ; 10us @ TC =100°C, VGE = 15V
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 30A
• High Input Impedance
• Built in Brake & 3 Phase Rectifier Circuit
• Fast & Soft Anti-Parallel FWD
• Built-in NTC Thermistor
• UL Certified No. E209204
Application
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
Package Code : 24PM-AA
P P+
GU
GV GW
R
B EU EV EW
S
UVW
T
GB -GU
-GV -GW
N N-
E
NTC
T1
T2
Internal Circuit Diagram
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Inverter
&
Brake
Converter
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TSC
VRRM
IO
IFSM
I2t
TJ
Common
TSTG
VISO
Mounting Torque
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
@ TC = 80°C
Diode Continuous Forward Current @ TC = 80°C
Diode Maximum Forward Current
Maximum Power Dissipation
Short Circuit Withstand Time
Repetitive Peak Reverse Voltage
@ TC = 25°C
@ TC = 100°C
Average Output Rectified Current
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive
Energy pulse @ 1Cycle at 60Hz
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
@ AC 1minute
Mounting part Screw
@ M4
FMM7G30US60N
600
± 20
30
60
30
60
104
10
1600
30
300
369
-40 to +150
-40 to +125
2500
4.0
Units
V
V
A
A
A
A
W
us
V
A
A
A2s
°C
°C
V
N.m
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2003 Fairchild Semiconductor Corporation
FMM7G30US60N Rev. A
1 page  
1000
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 30A
TC = 25℃ ━━
TC = 125℃ ------
Ton
Tr
100
20 40 60 80
G ate R e sista n c e, R g [ ]
Ω
Fig 7. Turn-On Characteristics vs.
Gate Resistance
100
10000
Common Emitter
VCC = 300V, VGE = ± 15V
I = 30A
C
TC = 25℃ ━━
T = 125℃ ------
C
1000
Eon
E o ff
100
20
40 60 80
G ate R e sista n c e, R g [ ]
Ω
100
Fig 9. Switching Loss vs. Gate Resistance
1000
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 30A
TC = 25℃ ━━
TC = 125℃ ------
T o ff
Tf
100
20 40 60 80
G ate R e sista n c e, R g [ ]
Ω
Fig 8. Turn-Off Characteristics vs.
Gate Resistance
100
1000
Common Emitter
VGE = ± 15V, RG = 15Ω
TC = 25℃ ━━
TC = 125℃ ------
100
Ton
Tr
20 30 40 50
C o ll e c t o r C u r r e n t, I [ A ]
C
Fig 10. Turn-On Characteristics vs.
Collector Current
60
1000
Common Emitter
VGE = ± 15V, RG = 15Ω
T = 25℃ ━━
C
TC = 125℃ ------
T o ff
Tf
100
20 30 40 50
C o ll e c t o r C u rr e n t, I [ A ]
C
Fig 11. Turn-Off Characteristics vs.
Collector Current
©2003 Fairchild Semiconductor Corporation
60
10000
Common Emitter
VGE = ± 15V, RG = 15Ω
TC = 25℃ ━━
TC = 125℃ ------
1000
Eon
E o ff
100
20 30 40 50
C o ll e c t o r C u r r e n t, I [ A ]
C
60
Fig 12. Switching Loss vs. Collector Current
FMM7G30US60N Rev. A
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FMM7G30US60N.PDF ] | |
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