(PDF) FPN530A Datasheet - NPN Low Saturation Transistor

Número de pieza	FPN530A
Descripción	NPN Low Saturation Transistor
Fabricantes	Fairchild Semiconductor
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No Preview Available ! FPN530 FPN530A C BE TO-226 NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NC. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range 30 60 5.0 3.0 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic PD Total Device Dissipation RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max FPN530 / FPN530A 1.0 50 125 Units V V V A °C Units W °C/W °C/W  1999 Fairchild Semiconductor Corporation 1 page

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PDF FPN530A Data sheet ( Hoja de datos )