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FQA160N08 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FQA160N08은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 FQA160N08 기능
기능 80V N-Channel MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FQA160N08 데이터시트, 핀배열, 회로
FQA160N08
80V N-Channel MOSFET
September 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
Features
• 160A, 80V, RDS(on) = 0.007@VGS = 10 V
• Low gate charge ( typical 220 nC)
• Low Crss ( typical 530 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
G DS
TO-3P
FQA Series
D
!
"
!"
G!
"
"
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQA160N08
80
160
113
640
± 25
1600
160
37.5
6.5
375
2.5
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ Max
-- 0.4
0.24 --
-- 40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. A, September 2000




FQA160N08 pdf, 반도체, 판매, 대치품
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. VGS = 0 V
2. ID = 250 μA
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
is Limited by R
DS(on)
103
100 µs 10 µs
102 1 ms
10 ms
DC
101
100
10-1
100
Notes :
1. T = 25 oC
C
2. TJ = 175 oC
3. Single Pulse
101
VDS, Drain-Source Voltage [V]
102
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. V = 10 V
GS
2. I = 80 A
D
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs. Temperature
180
150
120
90
60 Limited by Package
30
0
25 50 75 100 125 150 175
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
1 0 -1
0 .2
1 0 -2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
N otes :
1.
Z
θ
(
JC
t)
=
0 .4
/W
M ax.
2. D u ty F acto r, D = t1/t2
3 . T JM - T C = P D M * Z θ JC( t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
101
©2000 Fairchild Semiconductor International
Rev. A, September 2000

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FQA160N08 전자부품, 판매, 대치품
Package Dimensions
ø3.20 ±0.10
15.60 ±0.20
13.60 ±0.20
9.60 ±0.20
TO-3P
4.80 ±0.20
1.50
+0.15
–0.05
2.00 ±0.20
3.00 ±0.20
1.00 ±0.20
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
©2000 Fairchild Semiconductor International
1.40 ±0.20
0.60
+0.15
–0.05
Rev. A, September 2000

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부품번호상세설명 및 기능제조사
FQA160N08

80V N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor

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