|
|
|
부품번호 | FQA47P06 기능 |
|
|
기능 | 60V P-Channel MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
FQA47P06
60V P-Channel MOSFET
May 2001
QFET TM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• -55A, -60V, RDS(on) = 0.026Ω @VGS = -10 V
• Low gate charge ( typical 84 nC)
• Low Crss ( typical 320 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
G!
G DS
TO-3P
FQA Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
S
!
●
●
▶▲
●
!
D
FQA47P06
-60
-55
-38.9
-220
± 25
820
-55
21.4
-7.0
214
1.43
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.7
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. VGS = 0 V
2. ID = -250 μ A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
103 Operation in This Area
is Limited by R DS(on)
102 100 µs
1 ms
10 ms
DC
101
100
10-1
100
※ Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
101
-VDS, Drain-Source Voltage [V]
102
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = -10 V
2. ID = -23.5 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs. Temperature
60
50
40
30
20
10
0
25 50 75 100 125 150 175
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D = 0.5
1 0 -1
0 .2
0 .1
0 .05
0 .02
0 .01
1 0 -2
sin g le p u lse
※ N otes :
1.
Zθ
(t)
JC
=
0 .7
℃ /W
M ax.
2. D uty F a ctor, D =t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Zθ
(t)
JC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u lse D u ra tio n [se c]
Figure 11. Transient Thermal Response Curve
101
©2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001
4페이지 Package Dimensions
ø3.20 ±0.10
15.60 ±0.20
13.60 ±0.20
9.60 ±0.20
TO-3P
4.80 ±0.20
1.50
+0.15
–0.05
2.00 ±0.20
3.00 ±0.20
1.00 ±0.20
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
©2001 Fairchild Semiconductor Corporation
1.40 ±0.20
0.60
+0.15
–0.05
Rev. A2. May 2001
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ FQA47P06.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FQA47P06 | 60V P-Channel MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |