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FQAF33N10 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FQAF33N10은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 FQAF33N10 기능
기능 100V N-Channel MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FQAF33N10 데이터시트, 핀배열, 회로
FQAF33N10
100V N-Channel MOSFET
April 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• 25.8A, 100V, RDS(on) = 0.052@VGS = 10 V
• Low gate charge ( typical 38 nC)
• Low Crss ( typical 62 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
G DS
TO-3PF
FQAF Series
D
!
"
!"
G!
"
"
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
FQAF33N10
100
25.8
18.2
103.2
±25
430
25.8
8.3
7.0
83
0.55
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ Max
-- 1.80
-- 40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°CW
°CW
©2000 Fairchild Semiconductor International
Rev. A, April 2000




FQAF33N10 pdf, 반도체, 판매, 대치품
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9 Notes:
1. V =0V
2.
GS
ID =
250
A
0.8
-100
-50 0
50 100 150
TJ, JunctionTemperature[oC]
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
is Limited by R
DS(on)
102
100 µs
1 ms
10 ms
101
DC
 Notes :
1. TC = 25 oC
100
2. TJ = 175 oC
3. Single Pulse
100 101 102
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
 Notes :
1. VGS = 10 V
2. ID = 16.5 A
-50 0
50 100 150
T , Junction Temperature [oC]
J
200
Figure 8. On-Resistance Variation
vs. Temperature
30
25
20
15
10
5
0
25 50 75 100 125 150 175
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D =0 .5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
 N otes :
1.
Z
(t)
JC
=
1 .8
 /W
M a x.
2 . D u t y F a c t o r , D = t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Z

(t
JC
)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S q u a re W a v e P u ls e D u ra tio n [s e c ]
1
Figure 11. Transient Thermal Response Curve
101
©2000 Fairchild Semiconductor International
Rev. A, April 2000

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FQAF33N10 전자부품, 판매, 대치품
Package Dimensions
TO-3PF
15.50 ±0.20
ø3.60 ±0.20
5.50 ±0.20
3.00 ±0.20
(1.50)
0.85 ±0.03
2.00 ±0.20
2.00 ±0.20
4.00 ±0.20
0.75
+0.20
–0.10
5.45TYP
[5.45 ±0.30]
2.00 ±0.20
5.45TYP
[5.45 ±0.30]
2.00 ±0.20
3.30 ±0.20
0.90
+0.20
–0.10
©2000 Fairchild Semiconductor International
Rev. A, April 2000

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