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부품번호 | FQB10N20L 기능 |
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기능 | 200V LOGIC N-Channel MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 9 페이지수
FQB10N20L / FQI10N20L
200V LOGIC N-Channel MOSFET
December 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for high efficiency switching DC/DC converters,
switch mode power supplies, and motor control.
Features
• 10A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
• Low gate charge ( typical 13 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct
operation from logic drivers
DD
!
GS
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
"
!"
G!
"
"
!
S
FQB10N20L / FQI10N20L
200
10
6.3
40
± 20
180
10
8.7
5.5
3.13
87
0.7
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ Max Units
-- 1.44 °C/W
-- 40 °C/W
-- 62.5 °C/W
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. VGS = 0 V
2. ID = 250 μA
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
102 is Limited by R DS(on)
101
100
10-1
100
100 µs
1 ms
10 ms
DC
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 5 A
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs. Temperature
12
10
8
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D =0 .5
0 .2
1 0 -1
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
※ N otes :
1 . Z θ J C( t ) = 1 . 4 4 ℃ /W M a x .
2 . D u t y F a c t o r , D = t 1/t 2
3 . T J M - T C = P D M * Z θ J C( t )
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
101
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
4페이지 Package Dimensions
9.90 ±0.20
D2PAK
4.50 ±0.20
1.30
+0.10
–0.05
1.27 ±0.10
2.54 TYP
0.80 ±0.10
2.54 TYP
10.00 ±0.20
0.10 ±0.15
2.40 ±0.20
0°~3°
0.50
+0.10
–0.05
10.00 ±0.20
(8.00)
(4.40)
(2XR0.45)
©2000 Fairchild Semiconductor International
0.80 ±0.10
Rev. A2, December 2000
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
FQB10N20 | 200V N-Channel MOSFET | Fairchild Semiconductor |
FQB10N20C | 200V N-Channel MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |