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FQB22P10 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FQB22P10은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 FQB22P10 기능
기능 100V P-Channel MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FQB22P10 데이터시트, 핀배열, 회로
FQB22P10 / FQI22P10
100V P-Channel MOSFET
QFET TM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• -22A, -100V, RDS(on) = 0.125@VGS = -10 V
• Low gate charge ( typical 40 nC)
• Low Crss ( typical 160 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
DD
GS
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
G
S
FQB22P10 / FQI22P10
-100
-22
-15.6
-88
±30
710
-22
12.5
-6.0
3.75
125
0.83
-55 to +175
300
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ Max
-- 1.2
-- 40
-- 62.5
©2002 Fairchild Semiconductor Corporation
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Rev. C, August 2002




FQB22P10 pdf, 반도체, 판매, 대치품
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9 Notes:
1. V =0V
2.
I
GS
=
-250μ
A
D
0.8
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
is Limited by R DS(on)
102
100 µs
1 ms
10 ms
101
DC
100
10-1
100
Notes :
1. TC = 25 oC
2. T = 175 oC
J
3. Single Pulse
101
-VDS, Drain-Source Voltage [V]
102
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = -10 V
2. ID = -11 A
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs. Temperature
25
20
15
10
5
0
25 50 75 100 125 150 175
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D = 0.5
1 0 -1
0 .2
0 .1
0 .05
0 .02
0 .01
1 0 -2
1 0 -5
sin g le p u ls e
N o tes :
1. Zθ
(t) = 1.2 /W
JC
M ax.
2 . D uty F acto r, D = t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Zθ
(t)
JC
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
101
Figure 11. Transient Thermal Response Curve
©2002 Fairchild Semiconductor Corporation
Rev. C, August 2002

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FQB22P10 전자부품, 판매, 대치품
Package Dimensions
9.90 ±0.20
D2-PAK
4.50 ±0.20
1.30
+0.10
–0.05
1.27 ±0.10
2.54 TYP
0.80 ±0.10
2.54 TYP
10.00 ±0.20
0.10 ±0.15
2.40 ±0.20
0°~3°
0.50
+0.10
–0.05
10.00 ±0.20
(8.00)
(4.40)
(2XR0.45)
©2002 Fairchild Semiconductor Corporation
0.80 ±0.10
Dimensions in Millimeters
Rev. C, August 2002

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