Datasheet.kr   

FQD3P50 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FQD3P50은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 FQD3P50 자료 제공

부품번호 FQD3P50 기능
기능 500V P-Channel MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


FQD3P50 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 9 페이지수

미리보기를 사용할 수 없습니다

FQD3P50 데이터시트, 핀배열, 회로
FQD3P50 / FQU3P50
500V P-Channel MOSFET
January 2009
QFET®
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast based on complimentary
half bridge.
D
GS
D-PAK
FQD Series
GDS
Features
• -2.1A, -500V, RDS(on) = 4.9@VGS = -10 V
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
I-PAK
FQU Series
G!
S
!
▶▲
!
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
(Note 3)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Internati
FQD3P50 / FQU3P50
-500
-2.1
-1.33
-8.4
± 30
250
-2.1
5.0
-4.5
2.5
50
0.4
-55 to +150
300
Typ Max
-- 2.5
-- 50
-- 110
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Rev. A2, January 2009




FQD3P50 pdf, 반도체, 판매, 대치품
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. VGS = 0 V
2. ID = -250 μA
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
is Limited by R DS(on)
101
100 µs
1 ms
100 10 ms
DC
10-1
10-2
100
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
-VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = -10 V
2. ID = -1.35 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs. Temperature
2.5
2.0
1.5
1.0
0.5
0.0
25
50 75 100 125
TC, Case Temperature []
150
Figure 10. Maximum Drain Current
vs. Case Temperature
100
1 0 -1
D =0.5
0 .2
0 .1
0 .05
0 .02
0 .01
s in g le p u ls e
N ote s :
1 . Z θ JC(t) = 2 .5 /W M a x.
2. D u ty F actor, D =t1/t2
3 . T JM - T C = P D M * Z θ JC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
101
©2009 Fairchild Semiconductor International
Rev. A2, January 2009

4페이지










FQD3P50 전자부품, 판매, 대치품
Mechanical Dimensions
TO-252 (DPAK) (FS PKG Code 36)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
millimeters
Part Weight per unit (gram): 0.33
©2009 Fairchild Semiconductor International
Rev. A2, January 2009

7페이지


구       성 총 9 페이지수
다운로드[ FQD3P50.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
FQD3P50

500V P-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
FQD3P50TM_F085

500V P-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵