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부품번호 FQD7P06 기능
기능 60V P-Channel MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FQD7P06 데이터시트, 핀배열, 회로
FQD7P06 / FQU7P06
60V P-Channel MOSFET
May 2001
QFET TM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• -5.4A, -60V, RDS(on) = 0.45@VGS = -10 V
• Low gate charge ( typical 6.3 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS
D-PAK
FQD Series
GDS
I-PAK
FQU Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
G!
S
!
▶▲
!
D
FQD7P06 / FQU7P06
-60
-5.4
-3.42
-21.6
± 25
90
-5.4
2.8
-7.0
2.5
28
0.22
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Typ Max Units
-- 4.5 °C/W
-- 50 °C/W
-- 110 °C/W
Rev. A2. May 2001




FQD7P06 pdf, 반도체, 판매, 대치품
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. VGS = 0 V
2. ID = -250 μ A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
101
100
10-1
100
Operation in This Area
is Limited by R
DS(on)
100 µs
1 ms
10 ms
DC
Notes :
1. TC = 25 oC
2. T = 150 oC
J
3. Single Pulse
101
-VDS, Drain-Source Voltage [V]
102
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = -10 V
2. ID = -2.7 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs. Temperature
6
5
4
3
2
1
0
25 50 75 100 125 150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0.5
10 0 0 .2
0 .1
0 .05
1 0 -1
0 .02
0 .01
sin g le p u ls e
N o tes :
1.
Zθ
(t)
JC
=
4 .5
/W
M ax.
2 . D uty F acto r, D = t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Zθ
(t)
JC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
101
©2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001

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FQD7P06 전자부품, 판매, 대치품
Package Dimensions
(0.50)
6.60 ±0.20
5.34 ±0.30
(4.34)
DPAK
(0.50)
2.30 ±0.10
0.50 ±0.10
MAX0.96
2.30TYP
[2.30±0.20]
0.76 ±0.10
2.30TYP
[2.30±0.20]
6.60 ±0.20
(5.34)
(5.04)
(1.50)
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
(2XR0.25)
©2001 Fairchild Semiconductor Corporation
0.76 ±0.10
Rev. A2. May 2001

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FQD7P06

60V P-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor

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