FQP13N50 Datasheet PDF - Fairchild Semiconductor
| Part Number | FQP13N50 | |
| Description | 500V N-Channel MOSFET | |
| Manufacturers | Fairchild Semiconductor | |
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FQP13N50/FQPF13N50
500V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power
factor correction, electronic lamp ballast based on half
bridge.
Features
• 12.5A, 500V, RDS(on) = 0.43Ω @VGS = 10 V
• Low gate charge ( typical 45 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
●
◀▲
●
●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP13N50 FQPF13N50
500
12.5 12.5 *
7.9 7.9 *
50 50 *
± 30
810
12.5
17
4.5
170 56
1.35 0.45
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
FQP13N50
0.74
0.5
FQPF13N50
2.23
--
Units
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, September 2002
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Typical Characteristics (Continued)
100
D = 0.5
1 0 -1
0 .2
0 .1
0 .05
1 0 -2
0 .02
0 .01
sin g le p u lse
※ N otes :
1.
Zθ
(t)
JC
=
0.7 4
℃ /W
M ax.
2. D uty F a ctor, D =t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Zθ
(t)
JC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u lse D u ra tio n [se c]
Figure 11-1. Transient Thermal Response Curve
for FQP13N50
101
10 0 D = 0 .5
1 0 -1
0 .2
0 .1
0 .05
0 .02
0 .01
1 0 -2
sin g le p u ls e
※ N o tes :
1.
Zθ
(t)
JC
=
2 .2 3
℃ /W
M ax.
2 . D uty F acto r, D = t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Zθ
(t)
JC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t , S q u a re W a v e P u ls e D u ra tio n [s e c ]
1
Figure 11. Transient Thermal Response Curve
for FQPF13N50
©2002 Fairchild Semiconductor Corporation
Rev. B, September 2002
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FQP13N50 electronic component. |
| Information | Total 10 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FQP13N50.PDF Datasheet ] | |
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