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FQP18N20V2 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FQP18N20V2은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 FQP18N20V2 자료 제공

부품번호 FQP18N20V2 기능
기능 200V N-Channel MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FQP18N20V2 데이터시트, 핀배열, 회로
FQP18N20V2/FQPF18N20V2
200V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
Features
• 18A, 200V, RDS(on) = 0.14@VGS = 10 V
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
D
!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQP18N20V2 FQPF18N20V2
200
18 18
11.9 11.9
72 72
± 30
340
18
12.3
6.5
123 40
0.99
0.32
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FQP18N20V2
1.01
0.5
62.5
FQPF18N20V2
3.1
--
62.5
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002




FQP18N20V2 pdf, 반도체, 판매, 대치품
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. VGS = 0 V
2. ID = 250 μ A
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
102
101
Notes :
100 1. TC = 25 oC
2. T = 150 oC
J
3. Single Pulse
Operation in This Area
is Limited by R DS(on)
100 us
1 ms
10 ms
DC
10-1
100
101 102
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP18N20V2
20
15
10
5
0
25 50 75 100 125 150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
©2002 Fairchild Semiconductor Corporation
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 9 A
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
Operation in This Area
102 is Limited by R DS(on)
100 us
1 ms
101
10 ms
100 Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-1
100
100 ms
DC
101 102
VDS, Drain-Source Voltage [V]
Figure 9-2. Maxiumum Safe Operating Area
for FQPF18N20V2
Rev. B, August 2002

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FQP18N20V2 전자부품, 판매, 대치품
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002

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관련 데이터시트

부품번호상세설명 및 기능제조사
FQP18N20V2

200V N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor

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