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부품번호 | FQP85N06 기능 |
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기능 | 60V N-Channel MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
FQP85N06
60V N-Channel MOSFET
May 2001
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• 85A, 60V, RDS(on) = 0.010Ω @VGS = 10 V
• Low gate charge ( typical 86 nC)
• Low Crss ( typical 165 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
GD S
TO-220
FQP Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
(Note 6)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
FQP85N06
60
85
60
300
± 25
810
85
16.0
7.0
160
1.07
-55 to +175
300
Typ Max
-- 0.94
0.5 --
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9 ※Notes:
1.
2.
VGS
ID =
=0V
250μ
A
0.8
-100
-50 0 50 100 150
TJ, JunctionTemperature[oC]
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
103 Operation in This Area
is Limited by RDS(on)
100μ s
102 1 ms
10 ms
DC
101
100
10-1
※ Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
100 101
V , Drain-Source Voltage [V]
DS
102
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. V = 10 V
GS
2. I = 42.5 A
D
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs. Temperature
100
80
60
Limited by Package
40
20
0
25 50 75 100 125 150 175
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D =0 .5
1 0 -1
0 .2
0 .1
0.0 5
0.0 2
0.0 1
1 0 -2
sin g le p u ls e
※ Notes :
1. Zθ
(t)
JC
=
0.94
℃ /W
Max.
2 . D u t y Fa c t o r , D = t /t
12
3. T
JM
-T =
C
P*
DM
Zθ
(t)
JC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
101
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
4페이지 Package Dimensions
9.90 ±0.20
(8.70)
ø3.60 ±0.10
TO-220
4.50 ±0.20
1.30
+0.10
–0.05
1.27 ±0.10
2.54TYP
[2.54 ±0.20]
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
0.50
+0.10
–0.05
2.40 ±0.20
10.00 ±0.20
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
FQP85N06 | 60V N-Channel MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |