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부품번호 | FQPF10N20C 기능 |
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기능 | 200V N-Channel MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 10 페이지수
FQP10N20C/FQPF10N20C
200V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.
Features
• 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 40.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
●
◀▲
●
●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP10N20C FQPF10N20C
200
9.5 9.5 *
6.0 6.0 *
38 38 *
± 30
210
9.5
7.2
5.5
72 38
0.57 0.3
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP10N20C
1.74
0.5
62.5
FQPF10N20C
3.33
--
62.5
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, March 2003
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. V = 0 V
GS
2. I = 250 μ A
D
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
102 Operation in This Area
is Limited by R DS(on)
100 µs
101 1 ms
10 ms
DC
100
※ Notes :
10-1 1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-2
100
101 102
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP10N20C
10
8
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
©2003 Fairchild Semiconductor Corporation
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 4.75 A
-50 0 50 100 150
T , Junction Temperature [oC]
J
200
Figure 8. On-Resistance Variation
vs Temperature
102 Operation in This Area
is Limited by R
DS(on)
100 µs
101 1 ms
10 ms
100 ※ Notes :
1. T = 25 oC
C
2. TJ = 150 oC
3. Single Pulse
100 ms
DC
10-1
100
101 102
VDS, Drain-Source Voltage [V]
Figure 9-2. Maximum Safe Operating Area
for FQPF10N20C
Rev. A, March 2003
4페이지 Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2003 Fairchild Semiconductor Corporation
Rev. A, March 2003
7페이지 | |||
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다운로드 | [ FQPF10N20C.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FQPF10N20 | 200V N-Channel MOSFET | Fairchild Semiconductor |
FQPF10N20C | 200V N-Channel MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |