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FQPF12N60C 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FQPF12N60C은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 FQPF12N60C 자료 제공

부품번호 FQPF12N60C 기능
기능 FQP12N60C/FQPF12N60C
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FQPF12N60C 데이터시트, 핀배열, 회로
FQP12N60C/FQPF12N60C
600V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
• 12A, 600V, RDS(on) = 0.65@VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 21 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP12N60C FQPF12N60C
600
12 12 *
7.4 7.4 *
48 48 *
± 30
870
12
22.5
4.5
225 51
1.78 0.41
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP12N60C
0.56
0.5
62.5
FQPF12N60C
2.43
--
62.5
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. B, October 2003




FQPF12N60C pdf, 반도체, 판매, 대치품
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9 Notes :
1.
2.
IVDG=S =2500Vμ
A
0.8
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
102 is Limited by R DS(on)
10 µs
100 µs
101
1 ms
10 ms
100 ms
DC
100
10-1
10-2
100
Notes :
1. TC = 25 oC
2. T = 150 oC
J
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9-1. Maximum Safe Operating Area
for FQP12N60C
14
12
10
8
6
4
2
0
25 50 75 100 125 150
T , Case Temperature []
C
Figure 10. Maximum Drain Current
vs Case Temperature
©2003 Fairchild Semiconductor Corporation
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 6.0 A
-50 0 50 100 150
T , Junction Temperature [oC]
J
200
Figure 8. On-Resistance Variation
vs Temperature
102
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
101 1 ms
10 ms
100 ms
100 DC
10-1
10-2
100
Notes :
1. TC = 25oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9-2. Maximum Safe Operating Area
for FQPF12N60C
Rev. B, October 2003

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FQPF12N60C 전자부품, 판매, 대치품
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2003 Fairchild Semiconductor Corporation
Rev. B, October 2003

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관련 데이터시트

부품번호상세설명 및 기능제조사
FQPF12N60

600V N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
FQPF12N60C

FQP12N60C/FQPF12N60C

Fairchild Semiconductor
Fairchild Semiconductor

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