FQPF32N12V2 Datasheet PDF - Fairchild Semiconductor
| Part Number | FQPF32N12V2 | |
| Description | 120V N-Channel MOSFET | |
| Manufacturers | Fairchild Semiconductor | |
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There is a preview and FQPF32N12V2 download ( pdf file ) link at the bottom of this page. Total 10 Pages | ||
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FQP32N12V2/FQPF32N12V2
120V N-Channel MOSFET
QFET®
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for DC to DC converters, sychronous rectification,
and other applications lowest Rds(on) is required.
Features
• 32 A, 120V, RDS(on) = 0.05Ω @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 70 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
●
◀▲
●
●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP32N12V2 FQPF32N12V2
120
32 32 *
23 23 *
128 128 *
± 30
439
32
15
4.5
150 50
1 0.33
-55 to +175
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP32N12V2
1.0
40
62.5
FQPF32N12V2
3.0
--
62.5
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
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Typical Characteristics (Continued)
100
D =0.5
0.2
1 0 -1
0.1
0.05
0.02
0.01
1 0 -2 s in g le p u ls e
※ N otes :
1 . Z θ JC( t) = 1 .0 ℃ /W M a x .
2. D uty Factor, D =t /t
12
3 . T JM - T C = P D M * Z θ JC( t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u lse D u ra tio n [se c ]
101
Figure 11-1. Transient Thermal Response Curve for FQP32N12V2
D =0.5
100
0.2
0.1
0.05
1 0 -1
0.02
0.01
single pulse
1 0 -2
※ N otes :
1 . Z θ JC( t) = 3 .0 ℃ /W M a x .
2. D uty F actor, D = t1/t2
3.
T
JM
-
T
C
=
P
DM
*
Zθ
(t)
JC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u lse D u ra tio n [se c ]
101
Figure 11-2. Transient Thermal Response Curve for FQPF32N12V2
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FQPF32N12V2 electronic component. |
| Information | Total 10 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
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| Part Number | Description | MFRS |
| FQPF32N12V2 | The function is 120V N-Channel MOSFET. Fairchild Semiconductor | |
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