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PDF FQPF3P20 Data sheet ( Hoja de datos )
| Número de pieza | FQPF3P20 | |
| Descripción | QFET P-CHANNEL | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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QFET P-CHANNEL
FEATURES
• Advanced New Design
• Avalanche Rugged Technology
• Rugged Gate Oxide Technology
• Very Low Intrinsic Capacitances
• Excellent Switching Characteristics
• Unrivalled Gate Charge: 6.0nC (Typ.)
• Extended Safe Operating Area
• Lower RDS(ON): 2.06Ω (Typ.)
ABSOLUTE MAXIMUM RATINGS
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Characteristics
Drain-to-Source Voltage
Continuous Drain Current (TC = 25°C)
Continuous Drain Current (TC = 100°C)
Drain Current-Pulsed
x
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
y
Avalanche Current
x
Repetitive Avalanche Energy
x
Peak Diode Recovery dv/dt
z
Total Power Dissipation (TC = 25°C)
Linear Derating Factor
Operating Junction and Storage
Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
THERMAL RESISTANCE
Symbol
RθJC
RθJA
Characteristics
Junction-to-Case
Junction-to-Ambient
FQPF3P20
BVDSS = −200V
RDS(ON) = 2.7Ω
ID = −2.2A
TO-220F
1
2
3
1. Gate 2. Drain 3. Source
Value
−200
−2.2
−1.39
−8.8
±30
150
−2.2
3.2
−5.5
32
0.26
−55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Typ.
−
−
Max.
3.9
62.5
Units
°C/W
© 1999 Fairchild Semiconductor Corporation
REV. B
1
1 page  
QFET P-CHANNEL
FQPF3P20
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
50K as DUT
12V 200nF
300nF
VGS
-10V
Qg
VGS
VDS
Qgs Qgd
-3mA
DUT
Charge
-10V
-10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
Vin
td(on)
t on
tr
10%
VDS
90%
t off
td(off)
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
L
VDD
EAS
=
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
t p Time
RG VDD VDS (t)
DUT
IAS
BVDSS
ID (t)
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FQPF3P20.PDF ] | |
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