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FQPF5N60 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FQPF5N60은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 FQPF5N60 자료 제공

부품번호 FQPF5N60 기능
기능 600V N-Channel MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FQPF5N60 데이터시트, 핀배열, 회로
FQPF5N60
600V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
• 2.8A, 600V, RDS(on) = 2.0@VGS = 10 V
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 9.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• TO-220F package isolation = 4.0kV (Note 6)
GD S
TO-220F
FQPF Series
D
!
"
!"
G!
"
"
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQPF5N60
600
2.8
1.77
11.2
± 30
300
2.8
4.0
4.5
40
0.32
-55 to +150
300
Typ Max
-- 3.13
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002




FQPF5N60 pdf, 반도체, 판매, 대치품
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9 Notes:
1. V =0V
2.
I
GS
=
250
μ
A
D
0.8
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
is Limited by R DS(on)
101
1 ms 100 µs
10 ms
100 100 ms
DC
10-1
10-2
100
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
V , Drain-Source Voltage [V]
DS
103
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. V = 10 V
GS
2. ID = 2.5 A
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25 50 75 100 125 150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
100
1 0 -1
D = 0.5
0 .2
0 .1
0 .05
0 .02
0 .01
1 0 -2
1 0 -5
sin g le p u ls e
N o tes :
1.
Zθ
(t)
JC
=
3 .1 3
/W
M ax.
2 . D uty F acto r, D = t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Zθ
(t)
JC
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
101
Figure 11. Transient Thermal Response Curve
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002

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FQPF5N60 전자부품, 판매, 대치품
Package Dimensions
TO-220F
10.16 ±0.20
(7.00)
ø3.18 ±0.10
2.54 ±0.20
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
0.35 ±0.10
#1
2.54TYP
[2.54 ±0.20]
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
0.50
+0.10
–0.05
2.76 ±0.20
©2002 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. B, June 2002

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