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FQPF7N10L 데이터시트 PDF




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부품번호 FQPF7N10L 기능
기능 100V LOGIC N-Channel MOSFET
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FQPF7N10L 데이터시트, 핀배열, 회로
FQPF7N10L
100V LOGIC N-Channel MOSFET
December 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as high
efficiency switching DC/DC converters, and DC motor
control.
Features
• 5.5A, 100V, RDS(on) = 0.35@VGS = 10 V
• Low gate charge ( typical 4.6 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low level gate drive requirments allowing
direct operation from logic drives
GD S
TO-220F
FQPF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
FQPF7N10L
100
5.5
3.89
22
± 20
50
5.5
2.3
6.0
23
0.15
-55 to +175
300
Typ Max
-- 6.52
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. A4, December 2000




FQPF7N10L pdf, 반도체, 판매, 대치품
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. VGS = 0 V
2. ID = 250 μA
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
102
101
100
10-1
100
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
100 ms
DC
Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
101
V , Drain-Source Voltage [V]
DS
102
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 5 V
2. ID = 3.65 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs. Temperature
6
5
4
3
2
1
0
25 50 75 100 125 150 175
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
101
D = 0.5
0 .2
100
0 .1
0 .05
1 0 -1
0 .02
0 .01
sin g le p u ls e
N o tes :
1.
Z
θ
(t)
JC
=
6 .5 2
/W
M ax.
2 . D uty F acto r, D = t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Z
θ
(t)
JC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A4, December 2000

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FQPF7N10L 전자부품, 판매, 대치품
Package Dimensions
TO-220F
10.16 ±0.20
(7.00)
ø3.18 ±0.10
2.54 ±0.20
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
0.35 ±0.10
#1
2.54TYP
[2.54 ±0.20]
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
0.50
+0.10
–0.05
2.76 ±0.20
©2000 Fairchild Semiconductor International
Rev. A4, December 2000

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관련 데이터시트

부품번호상세설명 및 기능제조사
FQPF7N10

100V N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
FQPF7N10

100V LOGIC N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor

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