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FQT13N06L 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FQT13N06L은 전자 산업 및 응용 분야에서
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부품번호 FQT13N06L 기능
기능 60V LOGIC N-Channel MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FQT13N06L 데이터시트, 핀배열, 회로
FQT13N06L
60V LOGIC N-Channel MOSFET
May 2001
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• 2.8A, 60V, RDS(on) = 0.11@VGS = 10 V
• Low gate charge ( typical 4.8 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• Improved dv/dt capability
D
S
G SOT-223
FQT Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 70°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJA
Thermal Resistance, Junction-to-Ambient *
* When mounted on the minimum pad size recommended (PCB Mount)
D
!
"
!"
G!
"
"
!
S
FQT13N06L
60
2.8
2.24
11.2
± 20
85
2.8
0.21
7.0
2.1
0.017
-55 to +150
300
Typ Max
-- 60
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001




FQT13N06L pdf, 반도체, 판매, 대치품
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9 Note:
1. V =0 V
GS
2. ID =250 μ A
0.8
-100
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
101
100 µs
1 ms
10 ms
100 100 ms
DC
10-1
10-2
10-1
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
100 101
V , Drain-Source Voltage [V]
DS
102
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
Note :
1. VGS = 10 V
2. ID = 1.4 A
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25 50 75 100 125 150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs Case Temperature
102
D =0 .5
101 0 .2
0 .1
0 .0 5
0 .0 2
100 0 .0 1
s in g le p u ls e
N ote s :
1 . Z θ JC(t) = 6 0 /W M a x .
2 . D u ty F a c to r, D = t1/t2
3 . T JM - T C = P D M * Z θ JC(t)
PDM
t1
t2
1 0 -1
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
102
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
103
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001

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FQT13N06L 전자부품, 판매, 대치품
Package Dimensions
SOT-223
3.00 ±0.10
MAX1.80
0.06
+0.04
–0.02
(0.95)
2.30 TYP
4.60 ±0.25
0.70 ±0.10
(0.95)
0.25
+0.10
–0.05
0°~10°
6.50 ±0.20
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001

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