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부품번호 | FQT5P10 기능 |
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기능 | 250V N-Channel MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
FQT5P10
100V P-Channel MOSFET
QFET TM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• -1.0A, -100V, RDS(on) = 1.05Ω @VGS = -10 V
• Low gate charge ( typical 6.3 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• Improved dv/dt capability
D
S
G SOT-223
FQT Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 70°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJA
Thermal Resistance, Junction-to-Ambient *
* When mounted on the minimum pad size recommended (PCB Mount)
D
G
S
FQT5P10
-100
-1.0
-0.8
-4.0
± 30
55
-1.0
0.2
-6.0
2.0
0.016
-55 to +150
300
Typ Max
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9 ※Notes:
1. V =0V
2.
I
GS
=
-250μ
A
D
0.8
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
101
100
10-1
10-2
10-1
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
100 ms
DC
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
100 101
-VDS, Drain-Source Voltage [V]
102
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = -10 V
2. ID = -0.5 A
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs. Temperature
1.0
0.8
0.6
0.4
0.2
0.0
25 50 75 100 125 150
T , Case Temperature [℃]
C
Figure 10. Maximum Drain Current
vs. Case Temperature
102
D =0 .5
0 .2
101
0 .1
0 .0 5
0 .0 2
100 0.01
s in gle pu ls e
※ N otes :
1 . Z θ J C(t) = 6 2 .5 ℃ /W M a x .
2. D u ty F ac to r, D = t1/t2
3 . T J M - T C = P D M * Z θ J C( t )
PDM
t1
t2
1 0 -1
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
102
103
t1, S quare W ave P ulse D uration [sec]
Figure 11. Transient Thermal Response Curve
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
4페이지 Package Dimensions
SOT-223
3.00 ±0.10
MAX1.80
0.06
+0.04
–0.02
(0.95)
2.30 TYP
4.60 ±0.25
0.70 ±0.10
(0.95)
0.25
+0.10
–0.05
0°~10°
6.50 ±0.20
©2002 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. B, August 2002
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
FQT5P10 | 250V N-Channel MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |