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FQU2N60 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FQU2N60은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 FQU2N60 기능
기능 600V N-Channel MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FQU2N60 데이터시트, 핀배열, 회로
FQD2N60 / FQU2N60
600V N-Channel MOSFET
April 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
• 2.0A, 600V, RDS(on) = 4.7@VGS = 10 V
• Low gate charge ( typical 9.0 nC)
• Low Crss ( typical 5.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS
D-PAK
FQD Series
GDS
I-PAK
FQU Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8from case for 5 seconds
D
!
"
!"
G!
"
"
!
S
FQD2N60 / FQU2N60
600
2.0
1.26
8.0
±30
140
2.0
4.5
4.5
2.5
45
0.36
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Typ
Max
Units
--
2.78
°CW
-- 50 °CW
-- 110 °CW
Rev. A, April 2000




FQU2N60 pdf, 반도체, 판매, 대치품
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9 Notes:
1. VGS =0V
2. ID=250A
0.8
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
is Limited by R
DS(on)
101
100
10
µs
µs
1 ms
100
10 ms
DC
10-1
10-2
100
 Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
 Notes :
1. V = 10 V
GS
2. ID = 1.2 A
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs. Temperature
2.0
1.5
1.0
0.5
0.0
25 50 75 100 125 150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0.5
100
0 .2
0 .1
0 .05
1 0 -1
0 .02
0 .01
sin g le p u ls e
 N o tes :
1 . Z  JC(t) = 2 .7 8  /W M a x.
2 . D uty F acto r, D = t /t
12
3 . T JM - T C = P D M * Z  JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S q u a re W a v e P u ls e D u ra tio n [s e c ]
1
Figure 11. Transient Thermal Response Curve
101
©2000 Fairchild Semiconductor International
Rev. A, April 2000

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FQU2N60 전자부품, 판매, 대치품
Package Dimensions
(0.50)
6.60 ±0.20
5.34 ±0.30
(4.34)
DPAK
(0.50)
2.30 ±0.10
0.50 ±0.10
MAX0.96
2.30TYP
[2.30±0.20]
0.76 ±0.10
2.30TYP
[2.30±0.20]
6.60 ±0.20
(5.34)
(5.04)
(1.50)
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
(2XR0.25)
©2000 Fairchild Semiconductor International
0.76 ±0.10
Rev. A, April 2000

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