Datasheet.kr   

E28F004S5-120 데이터시트 PDF




Intel Corporation에서 제조한 전자 부품 E28F004S5-120은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 E28F004S5-120 자료 제공

부품번호 E28F004S5-120 기능
기능 BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT
제조업체 Intel Corporation
로고 Intel Corporation 로고


E28F004S5-120 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 30 페이지수

미리보기를 사용할 수 없습니다

E28F004S5-120 데이터시트, 핀배열, 회로
E
PRODUCT PREVIEW
BYTE-WIDE
SMART 5 FlashFile™ MEMORY FAMILY
4, 8, AND 16 MBIT
28F004S5, 28F008S5, 28F016S5
Includes Commercial and Extended Temperature Specifications
n SmartVoltage Technology
Smart 5 Flash: 5V VCC and 5V or
12V VPP
n High-Performance
4, 8 Mbit: 85 ns Read Access Time
16 Mbit: 95 ns Read Access Time
n Enhanced Data Protection Features
Absolute Protection with VPP = GND
Flexible Block Locking
Block Write Lockout during Power
Transitions
n Enhanced Automated Suspend Options
Program Suspend to Read
Block Erase Suspend to Program
Block Erase Suspend to Read
n Industry-Standard Packaging
40-Lead TSOP, 44-Lead PSOP
n High-Density 64-Kbyte Symmetrical
Erase Block Architecture
4 Mbit: Eight Blocks
8 Mbit: Sixteen Blocks
16 Mbit: Thirty-Two Blocks
n Extended Cycling Capability
100,000 Block Erase Cycles
n Low Power Management
Deep Power-Down Mode
Automatic Power Savings Mode
Decreases ICC in Static Mode
n Automated Program and Block Erase
Command User Interface
Status Register
n SRAM-Compatible Write Interface
n ETOX™ V Nonvolatile Flash
Technology
Intel’s byte-wide Smart 5 FlashFile™ memory family renders a variety of density offerings in the same
package. The 4-, 8-, and 16-Mbit byte-wide FlashFile memories provide high-density, low-cost, nonvolatile,
read/write storage solutions for a wide range of applications. Their symmetrically-blocked architecture, flexible
voltage, and extended cycling provide highly flexible components suitable for resident flash arrays, SIMMs,
and memory cards. Enhanced suspend capabilities provide an ideal solution for code or data storage
applications. For secure code storage applications, such as networking, where code is either directly
executed out of flash or downloaded to DRAM, the 4-, 8-, and 16-Mbit FlashFile memories offer three levels
of protection: absolute protection with VPP at GND, selective hardware block locking, or flexible software
block locking. These alternatives give designers ultimate control of their code security needs.
This family of products is manufactured on Intel’s 0.4 µm ETOX™ V process technology. They come in
industry-standard packages: the 40-lead TSOP, ideal for board-constrained applications, and the rugged
44-lead PSOP. Based on the 28F008SA architecture, the byte-wide Smart 5 FlashFile memory family
enables quick and easy upgrades for designs that demand state-of-the-art technology.
June 1997
Order Number: 290597-003




E28F004S5-120 pdf, 반도체, 판매, 대치품
BYTE-WIDE SMART 5 FlashFile™ MEMORY FAMILY
E
Number
-001
-002
-003
REVISION HISTORY
Description
Original version
Table 3 revised to reflect change in abbreviations from “W” for write to “P” for program.
Ordering information graphic (Appendix A) corrected: from PB = Ext. Temp. 44-Lead
PSOP to TB = Ext. Temp. 44-Lead PSOP
Updated Ordering Information and table
Correction to table, Section 6.2.3. Under ILO Test Conditions, previously read VIN = VCC
or GND, corrected to VOUT = VCC or GND
Section 6.2.7, modified Program and Block Erase Suspend Latency Times
Updated disclaimer
4 PRODUCT PREVIEW

4페이지










E28F004S5-120 전자부품, 판매, 대치품
E
BYTE-WIDE SMART 5 FlashFile™ MEMORY FAMILY
Table 1. Pin Descriptions
Sym
Type
Name and Function
A0–A20
INPUT ADDRESS INPUTS: Inputs for addresses during read and write operations.
Addresses are internally latched during a write cycle.
4 Mbit A0–A18
8 Mbit A0–A19
16 Mbit A0–A20
DQ0–DQ7
INPUT/ DATA INPUT/OUTPUTS: Inputs data and commands during CUI write cycles;
OUTPUT outputs data during memory array, status register, and identifier code read cycles.
Data pins float to high-impedance when the chip is deselected or outputs are
disabled. Data is internally latched during a write cycle.
CE#
INPUT CHIP ENABLE: Activates the device’s control logic, input buffers, decoders, and
sense amplifiers. CE#-high deselects the device and reduces power consumption to
standby levels.
RP#
INPUT
RESET/DEEP POWER-DOWN: When driven low, RP# inhibits write operations
which provides data protection during power transitions, puts the device in deep
power-down mode, and resets internal automation. RP#-high enables normal
operation. Exit from deep power-down sets the device to read array mode.
RP# at VHH enables setting of the master lock-bit and enables configuration of block
lock-bits when the master lock-bit is set. RP# = VHH overrides block lock-bits,
thereby enabling block erase and program operations to locked memory blocks.
Block erase, program, or lock-bit configuration with VIH < RP# < VHH produce
spurious results and should not be attempted.
OE#
INPUT OUTPUT ENABLE: Gates the device’s outputs during a read cycle.
WE#
INPUT WRITE ENABLE: Controls writes to the CUI and array blocks. Addresses and data
are latched on the rising edge of the WE# pulse.
RY/BY#
OUTPUT READY/BUSY#: Indicates the status of the internal WSM. When low, the WSM is
performing an internal operation (block erase, program, or lock-bit configuration).
RY/BY#-high indicates that the WSM is ready for new commands, block erase or
program is suspended, or the device is in deep power-down mode. RY/BY# is
always active.
VPP SUPPLY BLOCK ERASE, PROGRAM, LOCK-BIT CONFIGURATION POWER SUPPLY:
For erasing array blocks, programming data, or configuring lock-bits.
Smart 5 Flash 5V and 12V VPP
With VPP VPPLK, memory contents cannot be altered. Block erase, program, and
lock-bit configuration with an invalid VPP (see DC Characteristics) produce spurious
results and should not be attempted.
VCC SUPPLY DEVICE POWER SUPPLY: Internal detection automatically configures the device
for optimized read performance. Do not float any power pins.
Smart 5 Flash 5V VCC
With VCC VLKO, all write attempts to the flash memory are inhibited. Device
operations at invalid VCC voltages (see DC Characteristics) produce spurious
results and should not be attempted.
GND
SUPPLY GROUND: Do not float any ground pins.
NC NO CONNECT: Lead is not internally connected; it may be driven or floated.
PRODUCT PREVIEW
7

7페이지


구       성 총 30 페이지수
다운로드[ E28F004S5-120.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
E28F004S5-120

BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT

Intel Corporation
Intel Corporation

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵