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부품번호 | EBS12UC6APS-80 기능 |
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기능 | 128MB SDRAM S.O.DIMM | ||
제조업체 | Elpida Memory | ||
로고 | |||
DATA SHEET
128MB SDRAM S.O.DIMM
EBS12UC6APS (16M words × 64 bits, 1 bank)
Description
The EBS12UC6APS is 16M words × 64 bits, 1 bank
Synchronous Dynamic RAM Small Outline Dual In-line
Memory Module (S.O.DIMM), mounted 4 pieces of
256M bits SDRAM (EDS2516APTA) sealed in TSOP
package. This module provides high density and large
quantities of memory in a small space without utilizing
the surface mounting technology. Decoupling
capacitors are mounted on power supply line for noise
reduction.
Features
• Fully compatible with 8 bytes S.O.DIMM: JEDEC
standard outline
• 144-pin socket type small outline dual in line memory
module (S.O.DIMM)
PCB height: 31.75mm (1.25inch )
Lead pitch: 0.80mm
• 3.3V power supply
• Clock frequency: 100MHz/133MHz (max.)
• LVTTL interface
• Data bus width: × 64 non-ECC
• Single pulsed /RAS
• 4 Banks can operates simultaneously and
independently
• Burst read/write operation and burst read/single write
operation capability
• Programmable burst length (BL): 1, 2, 4, 8, Full page
• 2 variations of burst sequence
Sequential
Interleave
• Programmable /CAS latency (CL): 2, 3
• Byte control by DQMB
• Refresh cycles: 8192 refresh cycles/64ms
• 2 variations of refresh
Auto refresh
Self refresh
Document No. E0224E20 (Ver. 2.0)
Date Published November 2001 (K) Japan
URL: http://www.elpida.com
C Elpida Memory, Inc. 2001
EBS12UC6APS
Serial PD Matrix
Byte No.
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25 to 26
27
Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value
Number of bytes used by module
manufacturer
1
0
0
0
0
0
0
0
80H
Total SPD memory size
0 0 0 0 1 0 0 0 08H
Memory type
0 0 0 0 0 1 0 0 04H
Number of row addresses bits
0 0 0 0 1 1 0 1 0DH
Number of column addresses bits 0 0 0 0 1 0 0 1 09H
Number of banks
0 0 0 0 0 0 0 1 01H
Module data width
0 1 0 0 0 0 0 0 40H
Module data width (continued)
0 0 0 0 0 0 0 0 00H
Module interface signal levels
0 0 0 0 0 0 0 1 01H
SDRAM cycle time at CL = 3
(highest /CAS latency)
(-7A/7AL, -75/75L)
0 1 1 1 0 1 0 1 75H
(-80/80L)
1 0 0 0 0 0 0 0 80H
SDRAM access from Clock at CL = 3
(highest /CAS latency)
0 1 0 1 0 1 0 0 54H
(-7A/7AL, -75/75L)
(-80/80L)
0 1 1 0 0 0 0 0 60H
Module configuration type
0 0 0 0 0 0 0 0 00H
Refresh rate/type
1 0 0 0 0 0 1 0 82H
SDRAM width
0 0 0 1 0 0 0 0 10H
Error checking SDRAM width
0 0 0 0 0 0 0 0 00H
SDRAM device attributes:
minimum clock delay for back-to- 0 0 0 0 0 0 0 1 01H
back random column addresses
SDRAM device attributes:
Burst lengths supported
1 0 0 0 1 1 1 1 8FH
SDRAM device attributes: number of
banks on SDRAM device
0
0
0
0
0
1
0
0
04H
SDRAM device attributes:
/CAS latency
SDRAM device attributes:
/CS latency
0 0 0 0 0 1 1 0 06H
0 0 0 0 0 0 0 1 01H
SDRAM device attributes:
/WE latency
0 0 0 0 0 0 0 1 01H
SDRAM device attributes
0 0 0 0 0 0 0 0 00H
SDRAM device attributes: General 0 0 0 0 1 1 1 0 0EH
SDRAM cycle time at CL = 2
(2nd highest /CAS latency)
(-7A/7AL)
0 1 1 1 0 1 0 1 75H
(-75/75L, -80/80L)
1 0 1 0 0 0 0 0 A0H
SDRAM access from Clock at CL = 2
(2nd highest /CAS latency)
0 1 0 1 0 1 0 0 54H
(-7A/7AL)
(-75/75L, -80/80L)
0 1 1 0 0 0 0 0 60H
0 0 0 0 0 0 0 0 00H
Minimum row precharge time
(-7A/7AL)
(-75/75L, -80/80L)
0 0 0 0 1 1 1 1 0FH
0 0 0 1 0 1 0 0 14H
Comments
128 bytes
256 bytes
SDRAM
13
9
1
64 bits
0
LVTTL
7.5ns
8ns
5.4ns
6ns
None.
7.8µs
× 16
None.
1 CLK
1,2,4,8,F
4
2,3
0
0
7.5ns
10ns
5.4ns
6ns
15ns
20ns
Data Sheet E0224E20 (Ver. 2.0)
4
4페이지 EBS12UC6APS
Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, wait more than 100 µs and then, execute power on sequence and CBR (Auto) refresh before
proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit Note
Voltage on any pin relative to VSS
Supply voltage relative to VSS
VT
VDD
–0.5 to VDD + 0.5
(≤ 4.6 (max.))
–0.5 to +4.6
V
V
Short circuit output current
IOS 50
mA
Power dissipation
PD 4
W
Operating temperature
TA 0 to +70
°C 1
Storage temperature
Tstg
–55 to +125
°C
Notes: 1. SDRAM device specification
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Operating Conditions (TA = 0 to +70°C) (SDRAM device specification)
Parameter
Symbol
min. max.
Supply voltage
VDD
3.0 3.6
VSS
00
Input high voltage
VIH 2.0 VDD + 0.3
Input low voltage
VIL −0.3 0.8
Notes: 1. The supply voltage with all VDD pins must be on the same level.
2. The supply voltage with all VSS pins must be on the same level.
3. VIH (max.) = VDD + 2.0V for pulse width ≤ 3ns at VDD.
4. VIL (min.) = VSS − 2.0V for pulse width ≤ 3ns at VSS.
Unit
V
V
V
V
Note
1
2
3
4
Data Sheet E0224E20 (Ver. 2.0)
7
7페이지 | |||
구 성 | 총 14 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
EBS12UC6APS-80 | 128MB SDRAM S.O.DIMM | Elpida Memory |
EBS12UC6APS-80L | 128MB SDRAM S.O.DIMM | Elpida Memory |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |