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부품번호 | EBS21RC2ACNA 기능 |
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기능 | 2GB Registered SDRAM DIMM | ||
제조업체 | Elpida Memory | ||
로고 | |||
DATA SHEET
2GB Registered SDRAM DIMM
EBS21RC2ACNA (256M words × 72 bits, 2 banks)
Description
Features
The EBS21RC2ACNA is 256M words × 72 bits, 2
banks Synchronous Dynamic RAM Registered Module,
mounted 72 pieces of 256M bits SDRAM sealed in
TCP package. This module provides high density and
large quantities of memory in a small space without
utilizing the surface mounting technology. Decoupling
capacitors are mounted on power supply line for noise
reduction.
Note: Do not push the cover or drop the modules in
order to protect from mechanical defects, which
would be electrical defects.
• Fully compatible with 8 bytes DIMM: JEDEC
standard outline
• 168-pin socket type dual in line memory module
(DIMM)
PCB height: 41.91mm (1.65inch )
Lead pitch: 1.27mm
• 3.3V power supply
• Clock frequency: 133MHz (max.)
• LVTTL interface
• Data bus width: × 72 ECC
• Single pulsed /RAS
• 4 Banks can operates simultaneously and
independently
• Burst read/write operation and burst read/single write
operation capability
• Programmable burst length (BL): 1, 2, 4, 8
• 2 variations of burst sequence
Sequential
Interleave
• Programmable /CAS latency (CL): 2, 3
• Registered inputs with one clock delay
• Byte control by DQMB
• Refresh cycles: 8192 refresh cycles/64ms
• 2 variations of refresh
Auto refresh
Self refresh
• 1 piece of PLL clock driver, 3 pieces of register driver
and 1 piece of serial EEPROM (2k bits) for Presence
Detect (SPD) on PCB.
Document No. E0105E50 (Ver. 5.0)
Date Published June 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2001-2002
EBS21RC2ACNA
Serial PD Matrix*1
Byte No. Function described
0
Number of bytes used by module
manufacturer
1 Total SPD memory size
2 Memory type
3 Number of row addresses bits
4 Number of column addresses bits
5 Number of banks
6 Module data width
7 Module data width (continued)
8 Module interface signal levels
SDRAM cycle time
9 (highest /CAS latency)
7.5ns
SDRAM access from Clock
10 (highest /CAS latency)
5.4ns
11 Module configuration type
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value
1 0 0 0 0 0 0 0 80H
0 0 0 0 1 0 0 0 08H
0 0 0 0 0 1 0 0 04H
0 0 0 0 1 1 0 1 0DH
0 0 0 0 1 1 0 0 0CH
0 0 0 0 0 0 1 0 02H
0 1 0 0 1 0 0 0 48H
0 0 0 0 0 0 0 0 00H
0 0 0 0 0 0 0 1 01H
0 1 1 1 0 1 0 1 75H
0 1 0 1 0 1 0 0 54H
0 0 0 0 0 0 1 0 02H
12 Refresh rate/type
1 0 0 0 0 0 1 0 82H
13 SDRAM width
0 0 0 0 0 0 1 0 02H
14 Error checking SDRAM width 0 0 0 0 0 0 1 0 02H
SDRAM device attributes:
15 minimum clock delay for back-to- 0 0 0 0 0 0 0 1 01H
back random column addresses
16
SDRAM device attributes:
Burst lengths supported
0 0 0 0 1 1 1 1 0FH
17
SDRAM device attributes: number of
banks on SDRAM device
0
0
0
0
0
1
0
0
04H
18
SDRAM device attributes:
/CAS latency
0 0 0 0 0 1 1 0 06H
19
SDRAM device attributes:
/CS latency
0 0 0 0 0 0 0 1 01H
20
SDRAM device attributes:
/WE latency
0 0 0 0 0 0 0 1 01H
21 SDRAM device attributes
0 0 0 1 1 1 1 1 1FH
22 SDRAM device attributes: General 0 0 0 0 1 1 1 0 0EH
SDRAM cycle time
23 (2nd highest /CAS latency)
(-7A) 7.5ns
0 1 1 1 0 1 0 1 75H
(-75) 10ns
1 0 1 0 0 0 0 0 A0H
SDRAM access from Clock
24 (2nd highest /CAS latency)
(-7A)5.4ns
0 1 0 1 0 1 0 0 54H
(-75) 6ns
0 1 1 0 0 0 0 0 60H
SDRAM cycle time
25 (3rd highest /CAS latency)
Undefined
0 0 0 0 0 0 0 0 00H
SDRAM access from Clock (3rd
26 highest /CAS latency)
0 0 0 0 0 0 0 0 00H
Undefined
Comments
128
256 byte
SDRAM
13
12
2
72 bit
0 (+)
LVTTL
CL = 3*5
ECC
Normal
(7.8125 µs)
Self refresh
128M × 2
×2
1 CLK
1, 2, 4, 8
4
2, 3
0
0
Registered
VDD ± 10%
CL = 2*5
Data Sheet E0105E50 (Ver. 5.0)
4
4페이지 EBS21RC2ACNA
Block Diagram
/RCS0
/RCS1
RDQMB0
4 10Ω
DQ0 to DQ3
4 10Ω
DQ4 to DQ7
RDQMB1
4 10Ω
DQ8 to DQ11
4 10Ω
DQ12 to DQ15
4 10Ω
CB0 to CB3
DQMB /CS
D0/D1
I/O0, I/O1
DQMB /CS
D2/D3
I/O0, I/O1
DQMB /CS
D4/D5
I/O0, I/O1
DQMB /CS
D6/D7
I/O0, I/O1
DQMB /CS
D8/D9
I/O0, I/O1
DQMB /CS
D36/D37
I/O0, I/O1
DQMB /CS
D38/D39
I/O0, I/O1
DQMB /CS
D40/D41
I/O0, I/O1
DQMB /CS
D42/D43
I/O0, I/O1
DQMB /CS
D44/D45
I/O0, I/O1
RDQMB4
4 10Ω
DQ32 to DQ35
4 10Ω
DQ36 to DQ39
RDQMB5
4 10Ω
DQ40 to DQ43
4 10Ω
DQ44 to DQ47
4 10Ω
CB4 to CB7
DQMB /CS
D18/D19
I/O0, I/O1
DQMB /CS
D20/D21
I/O0, I/O1
DQMB /CS
D22/D23
I/O0, I/O1
DQMB /CS
D24/D25
I/O0, I/O1
DQMB /CS
D26/D27
I/O0, I/O1
DQMB /CS
D54/D55
I/O0, I/O1
DQMB /CS
D56/D57
I/O0, I/O1
DQMB /CS
D58/D59
I/O0, I/O1
DQMB /CS
D60/D61
I/O0, I/O1
DQMB /CS
D62/D63
I/O0, I/O1
/RCS2
/RCS3
RDQMB2
4 10Ω
DQ16 to DQ19
4 10Ω
DQ20 to DQ23
RDQMB3
4 10Ω
DQ24 to DQ27
4 10Ω
DQ28 to DQ31
DQMB /CS
D10/D11
I/O0, I/O1
DQMB /CS
D12/D13
I/O0, I/O1
DQMB /CS
D14/D15
I/O0, I/O1
DQMB /CS
D16/D17
I/O0, I/O1
DQMB /CS
D46/D47
I/O0, I/O1
DQMB /CS
D48/D49
I/O0, I/O1
DQMB /CS
D50/D51
I/O0, I/O1
DQMB /CS
D52/D53
I/O0, I/O1
RDQMB6
4 10Ω
DQ48 to DQ51
4 10Ω
DQ52 to DQ55
RDQMB7
4 10Ω
DQ56 to DQ59
4 10Ω
DQ60 to DQ63
DQMB /CS
D28/D29
I/O0, I/O1
DQMB /CS
D30/D31
I/O0, I/O1
DQMB /CS
D32/D33
I/O0, I/O1
DQMB /CS
D34/D35
I/O0, I/O1
DQMB /CS
D64/D65
I/O0, I/O1
DQMB /CS
D66/D67
I/O0, I/O1
DQMB /CS
D68/D69
I/O0, I/O1
DQMB /CS
D70/D71
I/O0, I/O1
/CS0, /CS1, /CS2, /CS3
DQMB0 to DQMB7
BA0 to BA1
A0 to A12
/RAS
/CAS
CKE0
/WE
VDD
REGE
PLL CLK
10kΩ
R
E
G
I
S
T
E
R
CLK0
/RCS0, /RCS1, /RCS2, /RCS3
RDQMB0 to RDQMB7
RBA0 to RBA1 -> BA0 to BA1: SDRAMs D0 to D71 CLK1
RA0 to RA12 -> A0 to A12: SDRAMs D0 to D71 to CLK3
/RRAS -> /RAS: SDRAMs D0 to D71
/RCAS -> /CAS: SDRAMs D0 to D71
RCKE0 -> CKE: SDRAMs D0 to D71
/RWE -> /WE: SDRAMs D0 to D71
VDD
0.0022µF × 41 pcs
Serial PD
VSS
10Ω
PLL
12pF
10Ω
12pF
VSS
CLK : SDRAMs
(D0 to D71)
Register
VDD (D0 to D71, U0)
0.22µF × 32 pcs
VSS (D0 to D71, U0)
SCL
SCL
SDA
U0
WP
A0 A1 A2
SDA
* D0 to D71: 256M bits SDRAM TCP
PLL: 2510
Register: 162834
U0: 2k bits EEPROM
Notes:
SA0 SA1 SA2 VSS
1. The SDA pull-up resistor is required due to the open-drain/open-collector output.
2. The SCL pull-up resistor is recommended because of the normal SCL line inacitve "high" state.
Data Sheet E0105E50 (Ver. 5.0)
7
7페이지 | |||
구 성 | 총 15 페이지수 | ||
다운로드 | [ EBS21RC2ACNA.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
EBS21RC2ACNA | 2GB Registered SDRAM DIMM | Elpida Memory |
EBS21RC2ACNA-75 | 2GB Registered SDRAM DIMM | Elpida Memory |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |