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부품번호 | DM-231 기능 |
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기능 | Magnetoresistance Element | ||
제조업체 | Sony Corporation | ||
로고 | |||
전체 5 페이지수
DM-231
Magnetoresistance Element
For the availability of this product, please contact the sales office.
Description
DM-231 a magnetic sensor using magnetoresist-
M-118 (Plastic)
ance effect is composed of ferromagnetic material
deposited by evaporation on a silicon substrate. It is
suitable for angle of rotation detection.
Features
• Low magnetic field and high sensitivity: bridge type
stands for large output voltage
150 mVp-p (Min.) at VCC=5 V, H=14400 A/m
• Fitted with bias magnet: stable output.
• High reliability: Achieved through silicon nitride
protective film.
Structure
Ferromagnetic thin film circuit (With ferrite magnet)
Applications
• Non-contact angle of rotation detection.
• Contactless potentiometer.
Absolute Maximum Ratings (Ta=25 °C)
• Supply voltage
VCC 10
• Storage temperature Tstg –30 to +100
V
°C
Recommended Operating Conditions
• Supply voltage
VCC
5
• Operating temperature Topr –20 to + 75
V
°C
Electrical Characteristics
Item Symbol
Output voltage
VO
Midpoint potential
Midpoint potential
difference/Output voltage
VA, VB
|VA-VB|
VO
Total resistance
RT
Condition
VCC=5 V , H=14400 A/m (Peak)
AC magnetic field θ =0 °
VCC=5 V , H=0 A/m
VCC=5 V , H=0 A/m
H=14400 A/m (Peak)
AC magnetic field θ =0 °
Min.
150
2.475
Ta=25 °C
Typ. Max. Unit
mVp-p
2.525 V
15 %
500 650 800
Ω
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E88Z12C5X-TE
DM-231
Midpoint potential vs. Magnetic field Intensi ty (1)
2.54
2.52
2.50
H
VA
VCC
231
GND
VCC=5V
2.48
2.46
0
H
VA 231 GND
VCC
4000 8000 12000 16000
H-Magnetic field intensity (Oe)
Midpoint potential vs. Magnetic field Intensity (2)
2.54
2.52
2.50
H
VCC
231 GND
VB
VCC=5V
2.48
2.46
0
H
231 GND
VCC
VB
4000 8000 12000 16000
H-Magnetic field intensity (Oe)
Midpoint potential vs. Magnetic field direction
2.54
2.52
2.50
2.48
VA
θH
VA
231
VCC
GND
VB
VCC=5V
H=14400A/m
2.46
VB
–90 –45 0 45 90
θ-Magnetic field direction (deg)
Output voltage vs. Magnetic field intensity
200
150
100 H
VA 231 GND
VCC
VB
50 H: Peak intensity of AC magnetic field
VCC=5V
0 4000 8000 12000 16000
H-Magnetic field intensity (Oe)
Temperature characteristics
800
200 RT
700
150
600
VO
100
50
—20
H=14400A/m
AC Magnetic field
VCC=5V
500
400
0 20 40 60
Ta-Ambient temperature (°C)
80
—4—
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다운로드 | [ DM-231.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
DM-231 | Magnetoresistance Element | Sony Corporation |
DM-232 | Magnetoresistance Element | Sony Corporation |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |