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PDF AWT6146 Data sheet ( Hoja de datos )
| Número de pieza | AWT6146 | |
| Descripción | QUAD BAND POWER AMPLIFIER MODULE WITH INTERGRATED POWER CONTROL | |
| Fabricantes | ANADIGICS Inc | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AWT6146 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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FEATURES
InGaP HBT Technology
Integrated Power Control (CMOS)
Quad Band Applications
+35 dBm GSM Output Power at 3.5 V
+33 dBm DCS/PCS Output Power at 3.5 V
55% GSM850/900 PAE
50% DCS/PCS PAE
Small Footprint 7mm x 7mm
Low Profile 1.3mm
Power Control Range >50 dB
GPRS Capable (class 12)
APPLICATIONS
GSM850/GSM900/DCS/PCS Handsets
Dual/Tri/Quad Band PDA
AWT6146
GSM850/GSM900/DCS/PCS
Quad Band Power Amplifier Module
With Integrated Power Control
ADVANCED PRODUCT INFORMATION - Rev 0.5
18 Pin
7mm x 7mm
Amplifier Module
PRODUCT DESCRIPTION
This quad band power amplifier module is designed
to support dual, tri and quad band applications. The
module includes an integrated power control
scheme that facilitates fast and easy production
calibration and reduces the number of external
components required to complete a power control
function.
The amplifiers power control range is typically
55 dB, with the output power set by applying an
analog voltage to VRAMP. The logical control inputs,
TX_EN and BS, are both 1.8 V and 3 V logic
compliant. The TX_EN is used to enable the
amplifier typically with the TX burst. The BS is used
to select which amplifier is enabled.
There are two amplifier chains, one to support
GSM850/900 bands, the other for DCS/PCS bands.
All of the RF ports for this device are internally
matched to 50 W. Internal DC blocks are provided at
the RF ports.
V CC2
DCS/PCS_IN
DCS/PCS
DCS/PCS_OUT
BS
TX_EN
VBATT
VREG
V RAMP
GSM850/900_IN
Bias and Power
Control
VCC_OUT
GSM850/900_OUT
GSM850/900
V CC2
Figure 1: Block Diagram
11/2003
1 page  
AWT6146
Table 6: Electrical Characteristics for GSM850
(VBATT = 3.5 V, VREG = 2.8 V, PIN = 3.0 dBm, Pulse Width =1154 ms, Duty 25%,
ZIN = ZOUT = 50 W, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH)
PARAMETER
MIN TYP MAX UNIT
COMMENTS
Operating Frequency (FO)
Input Power
Output Power, PMAX
Degraded Output Power
PAE @ PMAX
Forward Isolation 1
Forward Isolation 2
Cross Isolation
(2FO @ DCS/PCS port)
Harmonics
2fo
3fo
Stability
Ruggedness
RX Noise Power
Input VSWR
824 - 849 MHz
0 3.0 5 dBm
34.5 35 - dBm Freq = 824 to 849 MHz
-
33
-
dBm
VBATT = 3.0 V, TC = 85 °C,
VREG = 2.7 V, PIN = 0 dBm
- 55 -
% Freq = 824 to 849 MHz
- -35 -
dBm TX_EN = LOW, PIN = 5 dBm
- -25 -
dBm
TX_EN = HIGH, VRAMP = 0.2 V,
PIN = 5 dBm
- -30 -
dBm VRAMP = 0.2 V to VRAMP_MAX
- -15 -
- -30 -
dBm Over all output power levels
VSWR = 8:1 All Phases, POUT < 34.5 dBm
- - -36 dBm FOUT < 1 GHz
- - -30 dBm FOUT > 1 GHz
- - 10:1
All load phases,
POUT < 34.5 dBm
- -86 -
dBm
FTX = 849 MHz,
RBW = 100 kHz,
FRX = 869 to 894 MHz,
POUT < 34.5 dBm
- - 2.5:1
Over all output power levels
ADVANCED PRODUCT INFORMATION - Rev 0.5
11/2003
5
5 Page 
NOTES
AWT6146
ADVANCED PRODUCT INFORMATION - Rev 0.5
11/2003
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AWT6146.PDF ] | |
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