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BA159 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BA159
기능 Fast Silicon Rectifiers
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BA159 데이터시트, 핀배열, 회로
BA157 ... BY159
BA157 ... BY159
Fast Si-Rectifiers – Schnelle Si-Gleichrichter
Version 2008-09-22
Nominal current
Nennstrom
Ø 2.6-0.1
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Ø 0.77±0.07
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions - Maße [mm]
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
1A
400...1000 V
DO-41
DO-204AL
0.4 g
Maximum ratings and characteristics
Type
Typ
BA157
BA158
BA159
Repetitive peak reverse volt.
Period. Spitzensperrspannung
VRRM [V]
400
600
1000
Surge peak reverse volt.
Stoßspitzensperrspanng.
VRSM [V]
400
600
1000
Grenz- und Kennwerte
Typ. junction capacitance
Typ. Sperrschichtkapazität
Ctot [pF] 1
2.2
2.0
1.8
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 75°C
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
Rating for fusing – Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
TA = 25°C
Forward voltage
Durchlass-Spannung
Tj = 25°C IF = 1 A
Leakage current
Sperrstrom
Reverse recovery time
Sperrverzugszeit
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Tj = 25°C VR = VRRM
Tj = 100°C VR = VRRM
IF = 0.5 A through/über
IR = 1 A to IR = 0.25 A
Thermal resistance junction to leads
Wärmewiderstand Sperrschicht – Anschlussdraht
IFAV
IFRM
IFSM
i2t
Tj
TS
VF
IR
IR
trr
RthA
RthL
1 A 2)
10 A 2)
35/40 A
6 A2s
-50...+150°C
-50...+175°C
< 1.3 V
< 5 µA
< 100 µA
< 300 ns
< 45 K/W 2)
< 15 K/W
1 Measured at f = 1 MHz, VR = 4 V – Gemessen bei f = 1 MHz, VR = 4 V
2 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
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