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5M0365R 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 5M0365R은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 5M0365R 자료 제공

부품번호 5M0365R 기능
기능 Fairchild Power Switch(FPS)
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


5M0365R 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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5M0365R 데이터시트, 핀배열, 회로
www.fairchildsemi.com
KA5x03xx-SERIES
KA5H0365R, KA5M0365R, KA5L0365R
KA5H0380R, KA5M0380R, KA5L0380R
Fairchild Power Switch(FPS)
Features
• Precision Fixed Operating Frequency (100/67/50kHz)
• Low Start-up Current(Typ. 100uA)
• Pulse by Pulse Current Limiting
• Over Current Protection
• Over Voltage Protection (Min. 25V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto-Restart Mode
Applications
• SMPS for VCR, SVR, STB, DVD & DVCD
• SMPS for Printer, Facsimile & Scanner
• Adaptor for Camcorder
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consists of a
high voltage power SenseFET and a current mode PWM IC.
Included PWM controller integrates the fixed frequency
oscillator, the under voltage lock-out, the leading edge
blanking, the optimized gate turn-on/turn-off driver, the
thermal shutdown protection, the over voltage protection,
and the temperature compensated precision current sources
for the loop compensation and the fault protection circuitry.
Compared to a discrete MOSFET and a PWM controller or
an RCCsolution, a Fairchild Power Switch(FPS) can reduce
the total component count, design size and weight and at the
same time increase efficiency, productivity, and system
reliability. It has a basic platform well suited for the cost
effective design in either a flyback converter or a forward
converter
TO-220F-4L
Internal Block Diagram
1
1. GND 2. Drain 3. VCC 4. FB
#3 VCC
#4 FB
32V 5V Internal
Vref bias
Good
logic
5μA
7.5V
27V
OSC
9V
1mA
S
Q
R
2.5R
1R
+
L.E.B
0.1V
+
+ Thermal S/D
S
Q
R
OVER VOLTAGE S/D
Power on reset
©2003 Fairchild Semiconductor Corporation
SFET
#2 DRAIN
#1 GND
Rev.1.0.7




5M0365R pdf, 반도체, 판매, 대치품
KA5X03XX-SERIES
Electrical Characteristics (Control Part) (Continued)
(Ta = 25°C unless otherwise specified)
Characteristic
UVLO SECTION
Start Threshold Voltage
Stop Threshold Voltage
OSCILLATOR SECTION
Initial Accuracy
Symbol
VSTART
VSTOP
FOSC
Initial Accuracy
FOSC
Initial Accuracy
Frequency Change With Temperature (2)
Maximum Duty Cycle
FOSC
-
Dmax
Maximum Duty Cycle
Dmax
FEEDBACK SECTION
Feedback Source Current
Shutdown Feedback Voltage
Shutdown Delay Current
IFB
VSD
Idelay
REFERENCE SECTION
Output Voltage (1)
Temperature Stability (1)(2)
Vref
Vref/ΔT
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit
IOVER
PROTECTION SECTION
Over Voltage Protection
Thermal Shutdown Temperature (Tj) (1)
VOVP
TSD
TOTAL STANDBY CURRENT SECTION
Start-up Current
Operating Supply Current
(Control Part Only)
ISTART
IOP
Test condition
VFB=GND
VFB=GND
KA5H0365R
KA5H0380R
KA5M0365R
KA5M0380R
KA5L0365R
KA5L0380R
-25°CTa+85°C
KA5H0365R
KA5H0380R
KA5M0365R
KA5M0380R
KA5L0365R
KA5L0380R
Ta=25°C, 0V<Vfb<3V
Vfb>6.5V
Ta=25°C, 5VVfbVSD
Ta=25°C
-25°CTa+85°C
Max. inductor current
VCC>24V
-
VCC=14V
VCC<28
Min. Typ. Max. Unit
14 15 16
8.4 9 9.6
V
V
90 100 110 kHz
61 67 73 kHz
45 50 55 kHz
- ±5 ±10 %
62 67 72
%
72 77 82
%
0.7 0.9 1.1 mA
6.9 7.5 8.1
V
4 5 6 μA
4.80 5.00 5.20 V
- 0.3 0.6 mV/°C
1.89 2.15 2.41 A
25 27
140 160
29
-
V
°C
- 100 170 μA
- 7 12 mA
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process
4

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5M0365R 전자부품, 판매, 대치품
Typical Performance Characteristics (Continued)
(KA5H0380R, KA5M0380R, KA5L0380R)
KA5X03XX-SERIES
101
VG S
Top : 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom :4.5V
100
@ N otes:
1. 300μ s Pulse T est
2. TC = 25 oC
10-1 100
101
VDS, D ra in -S o u rc e V o lta g e [V]
Figure 1. Output Characteristics
101
100
150 oC
10-1 2
25 oC
-25 oC
@ N otes:
1. VD S = 30 V
2. 300 μ s Pulse Test
468
V GS, G a te -S o u rc e V o lta g e [V ]
Figure 2. Thansfer Characteristics
10
F ig 3 . O n -R e s is ta n c e vs . D ra in C u rre n t
8
7
Vgs= 10V
6
5
Vgs= 20V
4
3
2
1 @ N ote : T j= 25
0
01234
ID,D ra in C u rre n t
Figure 3. On-Resistance vs. Drain Current
10
1
150 oC
25 o C @ N otes:
1. VG S = 0V
2. 300 μ s Pulse Test
0.1
0.4 0.6 0.8
VSD, S o u rc e -D ra in Vo lta g e [V]
Figure 4. Source-Drain Diode Forward Voltage
1.0
1000
900
800
700
600
500
400
300
200
100
0
100
C iss = C gs + C gd (C ds = s horted)
C oss = C ds + C gd
C rs s = C g d
C iss
C oss
C rs s
101
VD S, D ra in -S o u rc e Vo lta g e [V]
Figure 5. Capacitance vs. Drain-Source Voltage
10
VD S = 160V
8 VD S = 400V
VD S = 640V
6
4
2
@ N ote : ID = 3.0A
0
0 5 10 15 20 25
Q G,T o ta l G a te C h a rg e [n C ]
Figure 6. Gate Charge vs. Gate-Source Voltage
30
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관련 데이터시트

부품번호상세설명 및 기능제조사
5M0365R

Fairchild Power Switch(FPS)

Fairchild Semiconductor
Fairchild Semiconductor

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